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| Image processing apparatus using look-up tables |
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| Apparatus for detecting positive and negative noise signals in a video signal |
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| Digital signal weighting processing apparatus and method |
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Charge coupled device image sensor
| Details |
Inventors: Lee, Seo K.; Shinji, Uja;
Assignee: Gold Star Electron Co., Ltd. (Chungcheongbuk, KR)
Primary Examiner: Van Ngo; Ngan
Assistant Examiner:
Attorney, Agent or Firm: Faegre & Benson
A CCD image sensor comprising: a semiconductor substrate of a first conductivity type connected to a ground; an impurity region of a second conductivity type formed in the surface of the semiconductor substrate of the first conductivity type, to serve as a blooming prevention layer; an impurity region of the first conductivity type formed in the surface of the semiconductor substrate, so that it encloses the impurity region of the second conductivity type serving as a blooming prevention layer, to serve as a potential barrier layer; an impurity region of the second conductivity type formed in the surface of the semiconductor substrate of the first conductivity type so that it encloses the impurity region of the first conductivity type serving as a potential barrier layer, to serve as a light receiving region; an insulation film which is formed on the surface of the semiconductor substrate of the first conductivity type and has contact holes at both edges of the impurity region of the second conductivity type, serving as a blooming prevention layer; silicide films filled in the contact holes; and a light shield conductor film which is formed on the surface of the remaining insulation film, except for a portion between the silicide films and the surfaces of the silicide films, and is connected to a voltage source. |
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DETAILED DESCRIPTION Therefore, the present invention has been made in view of the above problem, and it is an object of the present invention to provide a CCD image sensor and a method of making the same, in which the process of making it can be more simplified, the characteristic of long wave length can be improved and a smear characteristic can be avoided.
To achieve this object, the present invention uses a substrate of p-type instead of a substrate of n-type and also moves the excess signal charges from the light receiving regions toward the surface side of the substrate by applying a bias to the surface of the substrate, instead of moving the excess signal charges from the light receiving region toward the lower portion of the substrate as was explained above for the prior art.
In accordance with one aspect of the present invention, there is provided a CCD image sensor comprising: a semiconductor substrate of a first conductivity type connected to a ground; an impurity region of a second conductivity type formed in the surface of the semiconductor substrate of the first conductivity type, to serve as a blooming prevention layer; an impurity region of the first conductivity type formed in the surface of the semiconductor substrate, so that it encloses the impurity region of the second conductivity type serving as a blooming prevention layer, to serve as a potential barrier layer; an impurity region of the second conductivity type formed in the surface of the semiconductor substrate of the first conductivity type, so that it encloses the impurity region of the first conductivity type serving as a potential barrier layer, to serve as a light receiving region; an insulation film which is formed on the surface of the semiconductor substrate of the first conductivity type and has contact holes at both edges of the impurity region of the second conductivity type, serving as a blooming prevention layer; silicide films filled in the contact holes; and a light shield conductor film which is formed on the surface of the remaining insulation film, except for a portion between the silicide films and the surfaces of the silicide films, and is connected to a voltage source
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Image Analysis 
