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Method for repairing a pattern film
| Details |
Inventors: Katsumi, Suzuki;
Assignee: Seiko Instruments Inc. (Chiba, JP)
Primary Examiner: Fields; Carolyn E.
Assistant Examiner: Miller; John A.
Attorney, Agent or Firm: Spensley, Horn, Jubas & Lubitz
According to the present invention, correction of a transparent defect of a photomask or rearrangement of a pattern film on a substrate such as semiconductor is corrected or rearranged by carrying out a first step in which an edge portion which requires a relatively high degree of precision is finished with a high degree of precision by irradiating it with a scanning focused ion beam within a short period of time and a second step in which the remaining portion to be corrected or rearranged including its peripheral portion is scanned with a focused ion beam so as to be corrected or rearranged, whereby the edge portion of a correcting or rearranging area with a relatively large area which has heretofore given rise to a problem is finished with a high degree of precision. |
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DETAILED DESCRIPTION One embodiment of present invention will be described hereunder with reference to the drawings.
FIG.
1(a) to 1(c) illustrate one embodiment of the invention according to the correction procedure.
FIG.
1(a) shows a photomask having a transparent defect 3 which has an edge portion 8.
The photomask comprises a substrate 5 (transparent materials such as glass) and a pattern film 4 (opaque material such as chromium, chromium oxide and etc.
) thereon.
Although, the sample shown in FIG.
1(a) is a photomask, it is not limited to photomasks.
This method can be applied to a pattern film formed on a semiconductor.
FIG.
1(b) shows a first step in which a region including an edge portion 8 which requires finishing with a relatively high degree of precision is corrected.
In this step, since the region to be corrected has a relatively small area, even if a drift of X .
mu.
m/hr occurs, the necessary degree of precision in correction is obtained, and a pattern 9 film is formed at the edge portion 8 with a high degree of precision.
In sum, the pattern 9 is formed, since an organic compound vapour is supplied onto the defect 3 by a nozzle (not shown in fig.
), and only the edge portion 8 is irradiated with a scanning focused ion beam (not shown in fig.
).
FIG.
1(c) shows a second step in which the remaining portion of the transparent defect 3 is corrected.
In this step, a region including a defect portion left uncorrected in the first step and which includes a predetermined width extending outside the remaining defect portion is irradiated with the scanning focused ion beam to thereby correct the remaining defect portion of a relatively large area.
A pattern film 10 is formed in this step.
The procedure may be reversed, that is, it is also possible to first correct a portion having a relatively large area, exclusive of the edge portion 8, and then correct the edge portion 8 within a short period of time.
It should be noted that the pattern film is, for example, a carbon film, in this case of correction of a photomask
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Image Analysis 
