 Cooker |
| (a) The first embodiment overcomes the above problems of the conventional cooker. It is therefore ... |
|
| Telephone line interface option module |
| The invention eliminates the dependency between the main module and the interfacing option module. I... |
|
| LCD control device |
| The invention has an object to overcome the above-indicated drawbacks of the conventional ... |
|
| Pattern position detecting apparatus |
| The object of the present invention is to provide a pattern position detecting apparatus which is ... |
|
| Data transmission processing machine |
| Accordingly, it is an object of the present invention to provide an improved data transmission ... |
|
| Apparatus and method for performing a two-dimensional block data transform without transposition |
| I claim: 1. A device for performing a two-dimensional transform on a block of input data elements ... |
|
| Method for selecting inputs for a PC in which a ladder program is simulated |
| In view of the foregoing, the object of the present invention is to provide a simulation method for ... |
|
| Monitoring method and apparatus using a programmable logic controller |
| Accordingly, an object of the present invention is to provide a system that responds quickly when a ... |
|
| Image processing apparatus using look-up tables |
| We claim: 1. An image processing apparatus for executing operations upon a plurality of images, ... |
|
| Apparatus for detecting positive and negative noise signals in a video signal |
| Therefore, it is an object of the present invention to provide an improved noise detecting circuit ... |
|
|
Method of making a charge-coupled device image sensor
| Details |
Inventors: Kosonocky, Walter F.;
Assignee: RCA Corporation (Princeton, NJ)
Primary Examiner:
Assistant Examiner:
Attorney, Agent or Firm:
The present invention relates to methods of forming a charge-coupled device (CCD) image sensor which includes in a substrate of semiconductor material a plurality of parallel channel regions, a channel stop region between alternate pairs of adjacent channel regions, a blooming drain region in the channel stop region between the other alternate pairs of adjacent channel regions and a blooming drain barrier region around each blooming drain. The positions of the channel stop regions, the blooming drain regions and the blooming drain barrier regions are defined by a masking layer having openings therethrough and the channel stop regions, blooming drain regions and blooming drain barrier regions are formed by embedding ions of an appropriate conductivity modifier into the substrate through the openings in the masking layer. The channel stop regions may be defined at the same time as the blooming drain barrier regions or at the same time as the blooming drains so as to provide accurate spacing between the blooming drain barrier regions and the channel stop regions. The channel stop regions and the blooming drain barrier regions are all formed simultaneously and the blooming drain regions are formed simultaneously but separately from the channel stop regions and the blooming drain barrier regions. |
|
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS Referring to FIG.
1, a buried channel CCD image sensor which can be made by the method of the present invention is generally designated as 10.
Image sensor 10 includes a substrate 12 of a semiconductor material, such as single crystalline silicon, of one conductivity type, preferably P type, having a major surface 14.
A plurality of parallel channel regions 16 of a conductivity type opposite to that of the substrate 12 are in the substrate and extend along the surface 14.
Channel stop regions 18 are in the substrate 12 and extend along the surface 14 between alternate adjacent pairs of the channel region 16.
Along the substrate surface 14, the channel stop regions 18 are of the same conductivity type as the channel region 16 but less lightly doped or effectively less doped because of compensation.
Thus, if the channel regions are of N type conductivity, the channel stop regions 18 along the substrate surface 14 are of N.
sup.
- type conductivity.
The bottom portions of the channel regions 18, i.
e.
the portion deepest in the substrate 12, are of the same conductivity type as the substrate 12 but are more highly doped.
Thus, if the substrate 12 is of P type conductivity, the bottom portions of the channel stop regions 18 are of P+ type conductivity.
Blooming drain regions 20 are in the substrate 12 and extend along the substrate surface 14 with each blooming drain region 20 being between the alternate pairs of adjacent channel regions 16 which do not have a channel stop region 18 therebetween.
The blooming drain regions 20 are of the same conductivity type as the channel region 16 but have a higher concentration of the conductivity modifier.
Thus, for N type channel regions 16, the blooming drain regions 20 are of N+ type conductivity.
Surrounding each of the blooming drain regions 20 is a blooming drain barrier region 21.
The portion 21a of the blooming drain barrier region 21 under the blooming drain is of the same conductivity type as the substrate 12 but of higher conductivity, i
|
|
Image Analysis 
