Semiconductor component comprising bump-like, metallic lead contacts and multilayer wiring

DETAILED DESCRIPTION An object of the present invention is to alleviate this situation and to create a semiconductor component with bump-like metallic lead contacts and multilayer wiring wherein these interruptions at edges as well as sputtering gaps or voids cannot appear, and consequently wherein the described contact causticizations and corrosion are also reliably avoided.
Given a semiconductor component of the type initially cited, this object is achieved by means of providing individual insulating layers at a given contact location which terminate in a horizontal direction at different distances from an imaginary, vertical projection line of an edge of an area of the lead contact defined by a horizontal plane of section at a height at which the lead contact has its greatest horizontal expanse on a final passivation layer lying therebelow.
By terminating the insulating layers at different distances, the steps formed have a minimized height as compared to the prior art.
When etching the insulating layers, one succeeds in creating steps with a height sufficient to prevent the track interruptions as well as the occurrence of sputtering gaps and voids when vapor-depositing the lead contacts.