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Active matrix liquid crystal display in which the gate and/or drain lines are made of a Cr-Mo alloy
| Details |
Inventors: Onisawa, Kenichi; Sato, Tsutomu; Suzuki, Takashi; Anno, Kouichi; Yamamoto, Hideaki; Kaneko, Toshiki;
Assignee: Hitahci, Ltd. (Tokyo, JP)
Primary Examiner: Sikes; William L.
Assistant Examiner: Malinowski; Walter
Attorney, Agent or Firm: Antonelli, Terry, Stout, & Kraus, LLP
An active matrix liquid crystal display comprises a first substrate, a second substrate, and liquid crystal held therebetween. The first substrate includes on one surface, a plurality of gate lines, a plurality of drain lines crossing the gate lines, and transistors each disposed in the vicinity of crossing points between the gate lines and the drain lines. Source electrodes of the transistors are each connected to pixel electrodes each disposed in the vicinity of the source electrodes. The drain electrodes of the transistors are connected to one of a plurality of the drain lines while the gate electrodes of the transistors are connected to one of a plurality of the gate lines. The second substrate is disposed in such a manner as to face to the first substrate and to have facing electrodes on the surface facing to the pixel electrodes. In such a liquid crystal display, either a plurality of the gate lines or a plurality of the drain lines are made of a Cr alloy containing at least one kind selected from a group consisting of Mo, Nb, Ta and W. |
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DETAILED DESCRIPTION An object of the present invention is to provide a TFT element structure capable of enhancing throughput and yield, and particularly to provide an improved electrode material used for a TFT element and the structure of a film made of the material.
To achieve the above objects, according to a preferred mode of the present invention, a liquid crystal display apparatus is provided which includes a pair of substrates, a liquid crystal layer interposed between the substrates, and gate lines and drain lines formed on one of said pair of substrates, wherein the gate lines and drain lines cross each other in a matrix form.
Thin film transistors are formed near the intersections of the gate lines and data lines, and pixel electrodes are formed on one substrate, each connected to a corresponding thin film transistor.
In accordance with the present invention, the gate lines and/or drain lines are formed by a Cr--Mo alloy, and the resistivity of the Cr--Mo alloy is lower than 20 .
mu.
.
OMEGA.
cm.
In the above liquid crystal display, a plurality of the gate lines and a plurality of the drain lines are preferably formed in such a manner as to be identical in film thickness to each other; and an end portion of each pattern of a plurality of the gate and a plurality of the drain preferably has a taper of 45.
degree.
or less.
Either a plurality of the gate or a plurality of the drain lines are preferably formed of an laminated film having at least two alloy layers different in Cr content from each other.
In this case, an alloy layer being lower in Cr content is preferably disposed at a higher position of the laminated film.
The function of the present invention will be described below.
In an active matrix liquid crystal display, a gate line and a drain lines are required to be small in electric resistance (resistivity) for reducing the deformation of a waveform of a signal pulse, and the drain lines is required to provided an excellent electric contact with an a-Si material and an ITO (indium-Tin Oxide material) constituting a transparent electrode
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LCD 
