Active matrix type display

DETAILED DESCRIPTION An object of the present invention is to provide an active matrix type display from which a large storage capacity can be obtained without thinning an insulating layer between electrodes nor expanding the electrode to a pixel area.
Above object is achieved by an active matrix type display comprising a plurality of gate wirings formed on a substrate, a plurality of data wirings formed on the substrate substantially orthogonal to the gate wirings, a thin film transistor formed in a plurality of pixel areas decided by the gate wirings and the data wirings and arranged in a matrix shape, a pixel electrode formed in the pixel area and connected to the thin film transistor, and a plurality of storage capacitor electrodes forming a plurality of storage capacitors between the substrate, the pixel electrode and the storage capacitor electrodes via a plurality of insulating films.
According to the present invention, by laminating storage capacitors to structure a plurality of layers, capacity can be increased without generating an increase of a shielding area which reduces the aperture ratio of the pixel.
Further, in addition to the conventional storage capacitor, by laminating storage capacitors to a plurality of layered structures in the area where a conventional storage capacitor electrode originally shields a light, storage capacity can be increased without reducing the aperture ratio of the pixel.
It will be noted that, the active matrix type display according to the present invention uses the same device forming materials as in the conventional display and can be fabricated by the same fabrication method as before.