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Amorphous silicon thin film transistor and method of preparing same
| Details |
Inventors: Matsuda, Akihisa; Kondo, Michio; Chida, Yoshihiko;
Assignee: Central Glass Company, Limited (Yamaguchi, JP); Agency of Industrial Science and Technology (Tokyo, JP)
Primary Examiner: Prenty; Mark V.
Assistant Examiner:
Attorney, Agent or Firm: Evenson, McKeown, Edwards & Lenahan, PLLC
The disclosure relates to an amorphous silicon thin film transistor. The transistor includes a substrate, a gate electrode formed on the substrate, an insulating film formed on the substrate, a hydrogenated amorphous silicon film formed on the insulating film, a non-doped microcrystal silicon film formed on the amorphous silicon film; and source and drain electrodes which are formed on the microcrystal silicon film. In the transistor, there is provided an ohmic contact between the source and drain electrodes through the microcrystal silicon film. The insulating film optionally has an etched surface layer prepared by etching the insulating film which has been formed on the substrate, with an aqueous solution containing HF. The TFT can be produced in a simple manner with safety and with a simple equipment. |
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DETAILED DESCRIPTION It is an object of the present invention to provide an amorphous silicon thin film transistor in which n.
sup.
+ -type layer is omitted, and in which there can be obtained a high field effect mobility and a low threshold voltage.
According to a first aspect of the present invention, there is provided an amorphous silicon thin film transistor comprising: a substrate; a gate electrode formed on said substrate; an insulating film formed on said substrate; a hydrogenated amorphous silicon film formed on said insulating film; a non-doped microcrystal silicon film formed on said amorphous silicon film; and source and drain electrodes which are formed on said microcrystal silicon film.
According to a second aspect of the present invention, there is provided an amorphous silicon thin film transistor comprising: a substrate; a conductive gate electrode formed on said substrate; a gate insulating film formed on said substrate to cover said substrate and said gate electrode said insulating film being made of SiO.
sub.
2 and having an etched surface layer prepared by etching said insulating film which has been formed on said substrate, with an aqueous solution containing HF; a hydrogenated amorphous silicon film formed on said etched layer of said insulating film such that said gate electrode is further covered by said amorphous silicon film; a non-doped microcrystal silicon film formed on said amorphous silicon film such that said gate electrode is still further covered by said microcrystal silicon film; and source and drain electrodes which are formed on said microcrystal film and have a space therebetween, said space being positioned right above said gate electrode.
According to a third aspect of the present invention, there is provided a method of preparing an amorphous silicon thin film transistor, said method comprising the following steps of: (a) forming a gate electrode on a substrate; (b) forming an insulating film on said substrate; (c) forming a hydrogenated amorphous silicon film on said insulating film; (d) forming a non-doped microcrystal silicon thin film layer on said amorphous silicon film by a plasma chemical vapor deposition method using a mixture of a silane gas and a diluting gas; and (e) forming source and drain electrodes on said microcrystal silicon film layer
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