Disposing method for semiconductor elements

DETAILED DESCRIPTION OF THE INVENTION Embodiments of the present invention are explained below.
A manufacturing method for an organic EL display according to an embodiment of the present invention is explained with reference to FIG.
1 to FIG.
6.
FIG.
1 is a plan view showing one part of an active-matrix type organic EL display which is manufactured by the manufacturing method for this embodiment.
FIG.
2 is a cross section along line A--A in FIG.
1, and FIG.
3 is a cross section along line B--B in FIG.
1.
FIG.
4 is a drawing which explains a manufacturing method for an organic EL display according to an embodiment of the present invention, and is a drawing which explains a manufacturing method of a unit block.
FIG.
5 is a drawing which explains a method of disposing a unit block.
FIG.
6 is a cross section along line C--C in FIG.
1.
In this display, pixel 35 which is made of an organic EL element and pixel electrode 19 are disposed at each pixel position, and switching transistor 34, driving transistor 37, capacity 36 are provided as semiconductor elements for driving each pixel 35.
Also, these elements are connected to a driving circuit which is disposed in a peripheral part of the display, by signal line 31, power supply line 32, scanning line 33, and capacity line 38.
This display is manufactured after going through the process which disposes unit block 39 in a predetermined position on glass base board (display base board) 52 as shown as follows.
Also this display has one unit block 39 per each pixel 35.
In this unit block 39, switching transistor 34, driving transistor 37, and capacity 36 are formed as semiconductors as shown in FIG.
2 and FIG.
3.
Both transistors 34 and 37 are MOSFETs which have gate electrode 1, and gate oxide film 2, and source drain domain 3.
Source drain domain 3 is made of an impurity diffusion layer of a single crystal silicon base board 41a.
Capacity 36 is comprised of conducting layer 4 which is made of an impurity diffusion layer of single crystal silicon base board 41a, insulating layer 5 which is formed on conducting layer 4, and electrode 6 which is formed on insulating layer 5