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High electron mobility transistor
| Details |
Inventors: Yokoyama, Takashi;
Assignee: NEC Corporation (JP)
Primary Examiner: Mintel; William
Assistant Examiner:
Attorney, Agent or Firm: Hayes, Soloway, Hennessey, Grossman & Hage, P.C.
There is provided a field effect transistor including (a) an amorphous semiconductor layer made of amorphous silicon hydride containing impurities doped therein, (b) a semiconductor layer made of single crystal silicon having an electron affinity greater than that of the amorphous silicon hydride, formed on the amorphous semiconductor layer, (c) a gate insulating film formed on the semiconductor layer, and (d) a gate electrode formed on the gate insulating film. The amorphous semiconductor layer and the semiconductor layer cooperate with each other to thereby form a potential well at a junction therebetween. The above mentioned field effect transistor utilizes a difference in electron affinity between the amorphous semiconductor layer and the semiconductor layer to thereby make it possible to operate at a higher speed because carriers are not influenced by scattering of doped ions. In addition, the formation of a single crystal silicon layer on an amorphous silicon layer, which would be difficult to fabricate by epitaxial growth, can be accomplished by means of ion implantation, and can be operated in accordance with the operation principle of a conventional MOS transistor. |
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DETAILED DESCRIPTION It is an object of the present invention to provide a field effect transistor and a method of fabricating the same both of which are capable of decreasing defects at an interface between an amorphous silicon layer and a crystal silicon layer, and increasing concentration of carriers in the silicon substrate.
In one aspect, there is provided a field effect transistor including (a) a first semiconductor layer made of amorphous silicon hydride, and (b) a second semiconductor layer made of single crystal silicon having an electron affinity greater than that of the amorphous silicon hydride, in which the first and second semiconductor layers cooperate with each other to form at a junction therebetween a potential well which forms a channel in which carriers transfer.
It is preferable that the first semiconductor layer is a layer containing impurities such as hydrogen doped therein.
The potential well may form a channel for one of two-dimensional electron gas and two-dimensional source gas to transfer therethrough.
It is preferable that the second semiconductor layer contains an epitaxial silicon layer made of an intrinsic semiconductor.
There is further provided a field effect transistor including (a) an amorphous semiconductor layer made of amorphous silicon hydride containing impurities doped therein, (b) a semiconductor layer made of single crystal silicon having an electron affinity greater than that of the amorphous silicon hydride, formed on the amorphous semiconductor layer, (c) a gate insulating film formed on the semiconductor layer, and (d) a gate electrode formed on the gate insulating film.
The amorphous semiconductor layer and the semiconductor layer cooperate with each other to thereby form a potential well at a junction therebetween.
There is still further provided a field effect transistor including (a) a first semiconductor layer made of single crystal silicon, (b) a second semiconductor layer made of amorphous silicon hydride containing impurities doped therein and having an electron affinity smaller than that of the single crystal silicon, (c) a gate insulating film formed on the second semiconductor layer, and (d) a gate electrode formed on the gate insulating film
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