|
|
Array with metal scan lines controlling semiconductor gate lines
The invention addresses problems that affect arrays of circuitry formed on substrates. A two-dimensional (2D) array, for example, can include two sets of conductive ...
|
|
|
Photoelectric converter apparatus
In view of the foregoing, the first object of this invention is to improve the light receiving sensitivity of photodiodes. The second object is to improve the frequency ...
|
|
|
Image reading device with protective layers
An object of the present invention is to resolve such drawbacks and to provide an image reading device with improved durability, capable of relaxing the stress resulting ...
|
|
|
Composite dielectric passivation of high density circuits
What is claimed is: 1. A method for the formation of a final passivation composite on an integrated circuit comprising the steps of: a) depositing an initial film of ...
|
|
|
Method of making an assembly package having an air tight cavity and a product made by the method
Accordingly, it is an object of the present invention to provide a method of making an assembly package having an air tight cavity for housing an element therein which ...
|
|
|
Amorphous silicon thin film transistor and method of preparing same
It is an object of the present invention to provide an amorphous silicon thin film transistor in which n.sup.+ -type layer is omitted, and in which there can be obtained ...
|
|
|
Methods of forming semiconductor-on-insulator substrates
It is therefore an object of the present invention to provide improved methods of forming semiconductor-on-insulator substrates and devices and structures formed thereby....
|
|
|
High electron mobility transistor
It is an object of the present invention to provide a field effect transistor and a method of fabricating the same both of which are capable of decreasing defects at an ...
|
|
|
Process for forming ultra-shallow source/drain extensions
The present invention relates to a method of manufacturing an integrated circuit. The method includes providing a gate structures, including a dummy spacer material from ...
|
|
|
Process of making self-aligned amorphous-silicon thin film transistors
What is claimed is: 1. A method of fabricating a thin film transistor having a gate, a channel, a source and a drain, comprising the steps of: depositing and patterning ...
|