 Mount for imaging lens array on optical print head |
| In accordance with the present invention, apparatus is provided for mounting an imaging lens array ... |
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| Device for processing optical data with improved optical allignment means |
| The main object of the present invention is to provide a device for processing optical data which ... |
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| Liquid crystal display cell having a diffusely-reflective counter electrode |
| OF THE INVENTION In the embodiment shown by way of example only in FIGS. 1 and 2, the display cell ... |
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| Gain reflector-liquid crystal display |
| As may be seen hereinafter, the display disclosed herein is one which comprises a display medium ... |
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| Light modulating apparatus |
| The primary ofject of the present invention is to provide a light modulating apparatus which is ... |
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| Electronic watthour meter |
| What is claimed is: 1. Apparatus, comprising: metering means for measuring energy consumed by an ... |
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Method for making polystalline silicon thin film
| Details |
Inventors: Lee, Jae W.;
Assignee: Samsung Electronics Co., Ltd. (Kyungki, KR)
Primary Examiner: Chaudhuri; Olik
Assistant Examiner: Mulpuri; S.
Attorney, Agent or Firm: Donohoe; Charles R., Westerlund, Jr.; Robert A., Whitt; Stephen R.
A method for making a polycrystalline silicon (p-Si) thin film by heat treating an amorphous silicon (a-Si) thin film using a laser beam, including the steps of forming an a-Si thin film over a substrate, forming a metal reflection film over the a-Si thin film, forming, in the metal reflection film, windows each having a width smaller than the width of the regular strong energy portion of laser beam, annealing the portions of a-Si thin film disposed beneath the windows using a laser beam, removing the remaining portions of metal reflection film, each having a width smaller than the width of the regular strong energy portion of laser beam, to expose the portions of a-Si thin film disposed beneath the remaining portions of metal reflection film, and annealing the thus exposed portions of a-Si thin film disposed beneath the remaining portions of metal reflection film. A plurality of microlenses are formed disposed above edges of the portions of the metal reflection film remaining after the formation of the windows. Each microlens serves to refract the energy strength of the peripheral portion of laser beam toward the regular strong energy strength portion of laser beam and thus scatter the energy strength of the peripheral portion of laser beam. |
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DETAILED DESCRIPTION Therefore, an object of the invention is to solve the above-mentioned problems encountered in the prior art and to provide a method for making a polycrystalline silicon thin film capable of uniformly crystallizing a-Si into p-Si, even using a heat treatment at a low temperature of not more than 600.
degree.
C.
, by uniformly scanning the a-Si surface, using a laser beam of a short wave-length.
Another object of the invention is to provide a method for making a polycrystalline silicon thin film capable of utilizing a heat treatment at a low temperature and thus using an inexpensive glass substrate in place of an expensive Quartz substrate, thereby enabling one to obtain a great reduction in manufacture cost where the method is applied to the manufacture of display elements and similar products.
In accordance with the present invention, these objects can be accomplished by providing a method for making a polycrystalline silicon thin film by annealing an amorphous silicon thin film using a laser beam, comprising the steps of: forming an amorphous silicon thin film over a substrate; forming a metal reflection film over the amorphous silicon thin film; partially removing the metal reflection film, to form a plurality of spaced windows at the metal reflection film; forming a plurality of microlenses at predetermined positions above the remaining portions of the metal reflection film, respectively; annealing the portions of the amorphous silicon thin film disposed beneath the windows using the laser beam such that the regular strong energy portion of the laser beam is scanned at each window; removing the remaining metal reflection film and the microlenses, to expose portions of the amorphous silicon thin film disposed beneath the remaining metal reflection film; and annealing the exposed portions of the amorphous silicon thin film using the laser beam such that the regular strong energy portion of the laser beam is scanned at each exposed portion.
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LCD 
