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Method of inspecting thin film transistor liquid crystal substrate and apparatus therefor
| Details |
Inventors: Maeda, Shunji; Kubota, Hitoshi; Ono, Makoto;
Assignee: Hitachi, Ltd. (Tokyo, JP)
Primary Examiner: Wieber; Kenneth A.
Assistant Examiner: Tobin; Christopher
Attorney, Agent or Firm: Antonelli, Terry, Stout & Kraus
The invention relates to a method of inspecting and correcting a thin film transistor liquid crystal substrate and an apparatus therefor, where a plurality of scan lines and signal lines are connected electrically in common at each one terminal side respectively, and an infrared image outside the pixel domain is detected after lapse of a prescribed time from the time point of applying voltage between the scan lines and the signal lines, and an infrared image outside the pixel domain is detected after lapse of a prescribed time from the time point of stopping the voltage application, and the scan lines and the signal lines relating to variation of the heating state are detected from difference or quotient between an infrared image at the voltage applying state and an infrared image at the stopping state of voltage application, thereby a pixel address with a shortcircuit defect occurring is specified. If an image part being equal to the set threshold value or more does not exist in the difference infrared image in the pixel address, a wiring pattern position in the pixel address is detected from a visible image of the pixel address, and this wiring pattern and one from a neighboring pixel address are compared to detect a short circuit defect which can be removed by laser. |
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DETAILED DESCRIPTION An object of the present invention is to provide an inspection method of a thin film transistor liquid crystal substrate and an apparatus therefor, wherein various short circuit defects existing on a thin film transistor liquid crystal substrate can be detected rapidly with high accuracy at non-contact state with the substrate.
Another object of the present invention is to provide an inspection method of a thin film transistor liquid crystal substrate and an apparatus therefor, wherein even in a thin film transistor liquid crystal substrate with an intersection between a scan line and a signal line and a thin film transistor itself are pluralized, it can be specified to which intersection or to which thin film transistor a shortcircuit defect exists.
Another object of the present invention is to provide an inspection method of a thin film transistor liquid crystal substrate, wherein various short circuit defects existing between a scan line and a signal line on a thin film transistor liquid crystal substrate, between scan lines and between signal lines can be detected rapidly at non-contact state with the substrate.
Another object of the present invention is to provide an inspection method of a thin film transistor liquid crystal substrate, wherein shortcircuit defect positions existing between a scan line and a signal line on a thin transistor liquid crystal substrate, between scan lines and between signal lines can be detected rapidly at large S/N and at non-contact state with the substrate.
Another object of the present invention is to provide an inspection method of a thin film transistor liquid crystal substrate, wherein shortcircuit defect positions existing in a pixel domain on a thin film transistor liquid crystal substrate can be detected rapidly at non-contact state with the substrate.
Another object of the present invention is to provide an inspection method of a thin film transistor liquid crystal substrate, wherein even in a thin film transistor liquid crystal substrate with an intersection between a scan line and a signal line and a thin film transistor itself are pluralized, a pixel address with shortcircuit defects existing is specified, and then the shortcircuit defect positions within the pixel address can be detected rapidly at non-contact state with the substrate
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LCD 
