Mirror with dazzle light attenuation zone

DETAILED DESCRIPTION OF THE APPARATUS OF THE INVENTION FIG.
1 is a cross-sectional view of a multilayered liquid-crystal matrix-type reflection mirror 10 of the invention, together with a control circuit.
Mirror 10 has a multilayered structure.
A substrate layer 12 comprises a reflector with a broadband spectral reflectivity.
Layer 12 may be a broadband reflective surface comprising a glass plate coated with a special reflection coating (not shown).
This special coating has maximum reflectivity in the range corresponding to spectral range of halogen lamps of automobile headlights.
A suitable material for the coating is a layer of magnesium fluoride, 5-15 .
mu.
m thick.
The outer surface of layer 12 is coated with a transparent conductive matrix layer 14, e.
g.
, of indium tin oxide (ITO), which is made in the form of a pixel array.
A pixel is the smallest element of an image that can be individually processed in an optical or in a TV system.
In FIG.
1, respective pixels are designated by reference numerals 14a, 14b, .
.
.
14n.
Each pixel has a rectangular shape and has a dimension of about 50 to 150 .
mu.
m.
Pixels 14a, 14b, .
.
.
14n have respective electrodes 16a, 16b, .
.
.
16n, respectively.
One end of each electrode is electrically connected to the respective pixel.
The other ends of electrodes 16a, 16b, .
.
.
16n form respective terminals 18a, 18b, .
.
.
18n.
Matrix layer 14 may have a thickness within the range of 7 to 15 .
mu.
m.
Matrix layer 14, in turn, is coated with a photoconductive layer 20 of photoconductive semiconductor material, such as cadmium selenide or cadmium sulfide.
Photoconductive layer 20 also is made in the form of a pixel array with pixels 20a, 20b, .
.
.
20n which have the same dimensions and pattern as pixels 14a, 14b, .
.
.
14n.
Layer 20 is deposited onto layer 14 so that the pixels of layer 20 overlie those of layer 14, respectively.
Layer 20 has a thickness of about 5 to 10 .
mu.
m.
Because CdSe/CdS semiconductor material efficiently absorbs light and therefore causes photoexcitation of charge carrier, a ratio of its electrical resistance in a nonilluminated state to a similar characteristics in an illuminated state is about 10