Photoelectric converter apparatus

DETAILED DESCRIPTION In view of the foregoing, the first object of this invention is to improve the light receiving sensitivity of photodiodes.
The second object is to improve the frequency characteristics of photodiodes.
The third object is to achieve said first and second objects and provide a method of manufacturing a semiconductor device which is capable of easily isolating photodiodes from bipolar elements.
The foregoing objects and other objects of the present invention have been achieved by the provision of a light receiving element in which the impurity density of the first and second conductive types in the parts to be vacated when impressing the reverse voltage are both kept less than 1E16 ?cm.
sup.
-3 !.
Thus, since in the case of impressing the reverse voltage to the light receiving elements, the impurity densities of the first and second conductive types vacancies to be formed can be kept both less than 1E16 ?cm.
sup.
-3 !, the vacant layer can be sufficiently enlarged, and both the improvement in the light receiving sensitivity and the decrease of parasitic capacitance can be achieved.
Thus, the construction of light receiving element having fairly good frequency characteristics can be obtained.
The nature, principle and utility of the invention will become more apparent from the following detailed description when read in conjunction with the accompanying in which like parts are designated by like reference numerals or characters.