Thin film silicon semiconductor device and process for producing thereof

DETAILED DESCRIPTION An object of the present invention is to provide a thin film silicon semiconductor device having excellent characteristics by solving the problems involved in the conventional thin film silicon semiconductor device.
Another object of the present invention is to provide a process for producing a thin film silicon semiconductor device of the kind described above at a low temperature in high yields.
In accordance with one aspect of the present invention, there is provided a thin film silicon semiconductor device disposed on an insulating substrate which comprises a thin polycrystalline silicon film having a lattice constant smaller than that of a single silicon crystal as the thin silicon film constituting the above-mentioned thin film silicon semiconductor device.
In accordance with another aspect of the present invention, there is provided a process for producing a thin film silicon semiconductor device on an insulating substrate which comprises the step of depositing a thin amorphous silicon film according to sputtering by glow discharge in an inert gas having a pressure of 3.
5 Pa or lower, and the step of annealing the thin amorphous silicon film for a heating time of 10 seconds or shorter to effect polycrystallization thereof.
In the first aspect of the present invention, a thin film silicon semiconductor device provided on an insulating substrate, comprises: a thin polycrystalline silicon film having a lattice constant smaller than that of a silicon single crystal as the thin silicon film constituting the thin film silicon semiconductor device.
Here, the ratio of the lattice constant of the thin polycrystalline silicon film to that of the silicon single crystal may be 0.
999 or lower.
The thin polycrystalline silicon film may have [111] axis orientation in a direction perpendicular to the surface of the substrate or in a direction close thereto.
The thin polycrystalline silicon film may contain boron in a concentration of 10.
sup.
14 to 10.
sup.
17 /cm.
sup.
3.
The thin polycrystalline silicon film may contain as an impurity at least one element selected from phosphorous and arsenic in a total impurity concentration of 10