GaN LED for flip-chip bonding and method of fabricating the same

DETAILED DESCRIPTION Accordingly, it is an aspect of the present invention to avoid the disadvantages, and to provide a GaN light emitting diode for a flip-chip bonding, which optimizes an electrode arrangement, secures a sufficient bonding area, and improves the brightness and the reliability, and a method of fabricating the GaN light emitting diode.
The above and/or other aspects are achieved by providing a GaN light emitting diode for a flip-chip bonding, including a sapphire substrate, and a light emitting structure including a first GaN clad layer, an activation layer, and a second GaN clad layer sequentially formed on the sapphire substrate.
At this time, the first GaN clad layer is exposed at one or more portions thereof in a shape of a lane with a predetermined width.
A plurality of first electrodes and a second electrode are respectively formed on the exposed portions of the first GaN clad layer and the second GaN clad layer.
The first electrodes and second electrode are formed in the shapes of lines with minimum widths and positioned parallel to each other.
Additionally, a passivation layer is formed on the light emitting structure and the first and second electrodes and punched at portions thereof to protect the portions of the first and second electrodes and the light emitting structure.
A first and a second bonding electrode are formed on the passivation layer as a way to insulate each other and connect to the first and second electrodes through punched portions of the passivation layer.
Further, both opposite ends of the activation layer and second GaN clad layer are etched in a shape of a lane to form the light emitting structure, the first electrodes are formed on both opposite ends of the first GaN clad layer constituting the light emitting structure in the shapes of lines with minimum widths, and the second electrode is formed on the second GaN clad layer in a shape of a line with a minimum width and is positioned parallel to the first electrodes.
In this regard, the second electrode is positioned at a center of the light emitting structure