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Light emitting semiconductor device with a surface-mounted and flip-chip package structure
| Details |
Inventors: Lin, Ming-der; Wang, Kwang-ru;
Assignee: Highlink Technology Corporation (Taiwan, TW)
Primary Examiner: Jackson; Jerome
Assistant Examiner:
Attorney, Agent or Firm: Martine & Penilla, LLP
A light emitting semiconductor device with a surface-mounted and flip-chip package structure is disclosed. The light emitting semiconductor device includes an insulating substrate and an LED. The LED includes a substrate, a first-type semiconductor layer, a first electrode formed on part of the first-type semiconductor layer surface, a second-type semiconductor layer formed on the first-type semiconductor layer surface but not covering the first electrode, and a second electrode formed on the second-type semiconductor layer. Two electrode layers are formed on the two sides of the insulating substrate and extend upwardly and downwardly to the upper and lower surface of the insulating substrate. The device is characterized in that the LED is mounted on the insulating substrate by a flip chip method and the insulating substrate is formed with two electrode layers at both side walls to surface-mounted with the LED. |
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DETAILED DESCRIPTION Therefore, one object of the present invention is to provide an improved light emitting semiconductor device with simplified package structure.
Another object of the present invention is to provide an improved light emitting semiconductor device with a lower manufacturing cost.
Moreover, another object of the present invention is to provide an improved light emitting semiconductor device with higher light-emitting efficiency.
The light emitting semiconductor device of the present invention comprises: an insulating substrate; an LED, which includes a substrate, a first-type semiconductor layer formed on the substrate surface, a first electrode formed on part of the first-type semiconductor layer surface, a second-type semiconductor layer formed on the surface of the first-type semiconductor layer but does not cover the first electrode, and a second electrode formed on the surface of the second-type semiconductor layer; two bumps, formed on the insulating substrate; and two electrode layers, formed on the two sides of the insulating substrate and extend upwardly and downwardly to the upper and lower surface of the insulating substrate.
The first and second electrodes of the LED are connected to the insulating substrate via the two bumps respectively.
Meanwhile, the upper parts of the two electrode layers are connected with the first and second electrode of the LED via the two bumps.
According to the package structure described above, the light emitting semiconductor device of the present invention has both of the advantages of the flip-chip package structure and the surface-mounting process.
Meanwhile, the insulating substrate of the light emitting semiconductor device of the present invention has a thermal-expansion coefficient similar to an LED and a thermal-conductivity similar to a metal material.
Hence, the device of the present invention possess a lower stress and better reliability, and can be operated with high power.
Further, the light emitting semiconductor device of the present invention is backside light-emitted type
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