Mercury chalcogenide contact for semiconductor devices

DETAILED DESCRIPTION An object of this invention is to provide a contact material for nondegenerate semiconductors, which has high electronegativity.
Another object of this invention is to provide a contact material for nondegenerate semiconductors which has a high electronegativity, and yet is still easy to fabricate onto the semiconductor.
Still another object of this invention is the provision of a novel and useful semiconductor contact material.
The foregoing and other objects of this invention may be achieved by using one of a group of materials which are designated as mercury chalcogenides, excepting those very sulphur-rich compositions with the cinnabar structure.
These materials may comprise one of the binary compounds HgSe, HgTe, and .
beta.
-HgS or alloys of these binary compounds.
The preferred material is HgSe.
A contact in accordance with this invention, may be grown on the surface of the semiconductor material, by placing the semiconductor material inside a chamber and exposing it to mercury vapor within that chamber while evaporating the selenium or other material to be used.
The novel features of the invention are set forth with particularity in the appended claims.
The invention will best be understood from the following description when read in conjunction with the accompanying drawings.