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Method-and-apparatus-for-substrate-heating-in-an-axially-symmetric-epitaxial-deposition-apparatus

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Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus

Details

Inventors: Robinson, McDonald; Behee, Ronald D.; deBoer, Wiebe B.; Johnson, Wayne L.;
Assignee: Epsilon Limited Partnership (Tempe, AZ)
Primary Examiner: Goldberg; E. A.
Assistant Examiner: Walberg; Teresa J.
Attorney, Agent or Firm: Harry M. Weiss & Associates

In an epitaxial deposition reactor with an axially symmetric gas flow carrying the deposition materials, apparatus and method for heating the substrate and associated susceptor uniformly is described. The apparatus includes at least one chamber having a plurality of heat lamps passing therethrough, the chamber being generally disposed symmetrically with respect to an axis of the substrate. The walls of the chamber are appropriately coated to reflect the light from the heat lamps and the outermost lamps can be energized to produce a higher temperature than the centrally located lamps to compensate for regions of the reactor that provide access to the substrate and therefore promote thermal losses. The spacing of the lamps can be varied also to compensate for thermal non-uniformity of the heating cavity. In a first embodiment, a lower chamber can be a chamber similar to the first chamber with the exception that the lamps are rotated 90.degree.. In a second embodiment, the lower chamber consists only of reflecting surfaces with no sources of heat generated therein. However, in this embodiment a portion of the lower chamber has a reflectivity different from the reflectivity of the remainder portion of the chamber. The substrate can be rotated to provide a further averaging of possible thermal structure. In a third embodiment, parabolic reflectors are associated with each lamp to provide greater uniformity in the radiation impinging on the substrate-susceptor combination. Chambers having heating lamps with both parabolic reflectors and with planar reflecting surfaces are also described.

DETAILED DESCRIPTION It is therefore an object of the present invention to provide an improved apparatus and method for use with epitaxial deposition process.
It is another object of the present invention to provide heating apparatus and method in an epitaxial deposition environment utilizing an axially symmetric gas flow.
It is yet another object of the present invention to provide method and apparatus for uniform heating of a semiconductor substrate in a epitaxial deposition apparatus in which the gas flow and the substrate have axial symmetry.
It is a more particular object of the present invention to provide uniform heating of a semiconductor substrate and associated susceptor combination utilizing heating lamps above and below the combination, wherein the two sets of heat lamps are at substantially right angles to each other.
It is yet another object of the present invention to provide a uniform heating of the semiconductor substrate-susceptor combination using a first chamber having a group of heating lamps and a second chamber in which the reflectivity of the chamber on the reverse side of the combination has a predetermined configuration and includes at least two regions with different reflectivity coefficients.
It is still another object of the present invention to provide a substrate-susceptor combination enclosed by two generally square heating chambers.
It is a more particular object of the present invention to enclose a substrate-susceptor combination with two generally square heating chambers, the heating chambers having heat lamps with radiation focused by parabolic reflectors positioned at approximately 90.
degree.
with respect to heat lamps in the other chamber.
It is another particular object of the present invention to enclose a substrate-susceptor combination with two chambers having radiation from heat lamps focused by parabolic reflectors, the heat lamps in each chamber positioned at approximately 90.
degree.
to the heat lamps in the other chamber, wherein a plurality of interior heat lamps in at least one chamber have a flat reflecting surface associated therewith

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