Process for epitaxial deposition of silicon

DETAILED DESCRIPTION Thus, it is an object of the present invention to provide a process for epitaxial deposition of silicon which results in shorter deposition cycle times that the conventional processes.
It is a further object of the present invention to provide a process for epitaxial deposition of silicon which reduces temperature changes in the susceptor and in the wafer during the cool down period prior to removal from the reactor.
It is still a further object of the present invention to provide a process for epitaxial deposition of silicon which employs inter-cycle reactor cleaning.
It is another further object of the present invention to provide a process for epitaxial deposition of silicon which achieves higher growth rates than that achieved by the conventional processes.
These and other objects hereinafter disclosed will become more apparent to those skilled in the art from the following more detailed description of the preferred embodiment of the present invention.
In the accompanying drawings like features are identified by like reference numerals.