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Selective filtering of wavelength-converted semiconductor light emitting devices
| Details |
Inventors: Trottier, Troy A.; Mueller, Gerd O.; Mueller-Mach, Regina B.; Krames, Michael R.;
Assignee: Lumileds Lighting U.S., LLC (San Jose, CA)
Primary Examiner: Nelms; David
Assistant Examiner: Tran; Mai-Huong
Attorney, Agent or Firm: Patent Law Group LLP, Leiterman; Rachel V.
A light emitting device includes a semiconductor light emitting device chip having a top surface and a side surface, a wavelength-converting material overlying at least a portion of the top surface and the side surface of the chip, and a filter material overlying the wavelength-converting material. The chip is capable of emitting light of a first wavelength, the wavelength-converting material is capable of absorbing light of the first wavelength and emitting light of a second wavelength, and the filter material is capable of absorbing light of the first wavelength. In other embodiments, a light emitting device includes a filter material capable of reflecting light of a first wavelength and transmitting light of a second wavelength. |
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DETAILED DESCRIPTION In accordance with embodiments of the invention, a light emitting device includes a wavelength-converting layer for converting the wavelength of light emitted from a light emitting device chip, and a filter layer for filtering out any unconverted light from the chip.
The example of a III-nitride flip chip is considered below.
It is to be understood that the invention is not limited to the materials, device orientations, or other details discussed in the examples below.
For example, the embodiments of the invention may be applied to any suitable light emitting device materials system, including for example III-V materials, III-nitride materials, III-phosphide materials, and II-VI materials.
Embodiments of the invention may be applied to any device geometry, including devices with contacts on opposite sides of the semiconductor layers and devices with contacts on the same side of the semiconductor layers, such as flip chips where light is extracted through a substrate, and epitaxy-up structures where light is extracted through the contacts.
FIG.
1 illustrates an embodiment of the present invention.
A light emitting device chip includes a substrate 10, an n-type region 12, an active region 14, and a p-type region 15.
In one embodiment, n-type region 12, active region 14, and p-type region 15 are III-nitride materials, having the formula Al.
sub.
x In.
sub.
y Ga.
sub.
z N, where 0.
ltoreq.
.
times.
.
ltoreq.
1, 0.
ltoreq.
y.
ltoreq.
1, 0.
ltoreq.
z.
ltoreq.
1, x+y+z=1.
Substrates suitable for the growth of III-nitride materials include GaN, SiC, and sapphire.
Each of n-type region 12, active region 14, and p-type region 15 may be a single layer or multiple layers with the same or different compositions, thicknesses, and dopant concentrations.
A portion of type region 15 and active region 14 is removed to expose a portion of n-type region 12.
Contacts 16 are formed on the remaining portion of p-type region 15 and the exposed portion of n-type region 12.
Contacts 16 may be electrically and physically connected to a submount 18 by submount interconnects 17
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Lighting 
