Inventors: Yeh, Keming W.;
Assignee: Xerox Corporation (Stamford, CT)
Primary Examiner: Edlow; Martin H.
Assistant Examiner:
Attorney, Agent or Firm:
Disclosed herein is a structure and process for a self-aligned metal semiconductor field effect transistor having the characteristics of a high speed, high density, low power LSI circuit and specifically an improved high device gain MESFET device using conventional photographic techniques. The inventive MESFET device has improved high device gain as a result of the elimination of series resistance, increased circuit integration density, and improved speed capability due to the elimination of spacings between gate and drain and gate and source and the improved high device gain. |
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