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Semiconductor processing apparatus for promoting heat transfer between isolated volumes
| Details |
Inventors: Davenport, Robert E.; Tepman, Avi;
Assignee: Applied Materials, Inc. (Santa Clara, CA)
Primary Examiner: Cummings; Scott
Assistant Examiner:
Attorney, Agent or Firm: Thomason & Moser
Apparatus for promoting heat transfer between a first volume (chamber volume) and a second volume (expandable, substrate support platform volume). Specifically, the apparatus comprises: a chamber defining a chamber volume that contains a chamber atmosphere, e.g., a partial vacuum; a substrate support platform that defines an expandable volume that contains a heat transfer medium, e.g., air; and a seal that isolates the chamber volume from the heat transfer medium. The substrate support platform further comprises: a substrate support platen that has a first surface located within the chamber volume and a second surface located within the expandable volume; a housing sealed to the second surface of the substrate support platen; and a expandable member such as a bellows, attached to the housing, to provide for expansion of the expandable volume that is defined by the housing and the bellows. The housing is typically fabricated of metal and the substrate support is typically fabricated of ceramic. The seal forms a hermetic junction between the ceramic substrate support and the metal housing. |
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DETAILED DESCRIPTION In accordance with the present invention, an apparatus and method are disclosed which can be used to provide a seal between two portions of a semiconductor processing reactor which are operated at different pressures.
The seal enables processing of the substrate under a partial vacuum which renders conductive/convective heat transfer impractical, while at least a potion of the substrate support platform, removed from the substrate contacting portion, is under a pressure adequate to permit heat transfer using a conductive/convective heat transfer means.
The apparatus of the present invention comprises a sealing apparatus capable of withstanding a pressure differential, typically about 15 psi (15.
15.
times.
10.
sup.
6 dynes/cm.
sup.
2) or less, over a temperature range of at least 300.
degree.
C.
, while bridging at least two materials having a substantial difference in linear expansion coefficient.
The difference in linear expansion coefficient depends upon the composition of the materials being bridged, but is typically at least about 3.
times.
10.
sup.
-3 in.
/in.
/.
degree.
C.
(m/m/.
degree.
C.
), measured at about 600.
degree.
C.
Preferably, the sealing means can withstand a pressure differential of at least about 15 psi during operational temperatures ranging from about 0.
degree.
C.
to about 600.
degree.
C.
while bridging two materials having a difference in linear expansion coefficient ranging from about 3.
times.
10.
sup.
-3 .
degree.
C.
.
sup.
-1 to about 25.
times.
10.
sup.
-3 .
degree.
C.
.
sup.
-1, measured at 600.
degree.
C.
In particular, the sealing means comprises a thin metal-comprising layer which is coupled to each of the materials which the seal bridges.
The material comprising the thin metal-comprising layer preferably exhibits a coefficient of expansion similar to one of the materials to be bridged.
Typically the metal-comprising layer is selected to have a thermal expansion coefficient relatively close to the lowest thermal expansion coefficient material to be bridged.
When the metal-comprising layer bridges between a metal (or metal alloy) and a ceramic material such as alumina or aluminum nitride, the metal-comprising layer is selected to have a linear thermal expansion coefficient in the range of about 2
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Lighting 
