 Oscillating spray device |
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| Process for the manufacture of discontinuous fibrils |
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| Apparatus for fluidically attenuating filaments |
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| Apparatus and process for melt-blowing a fiberforming thermoplastic polymer and product produced thereby |
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| Meltblown die and method |
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| Melt spinning apparatus |
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| Novel inertance loop construction for air sweep fluidic oscillator |
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| Head tooling parison adapter plates |
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| Adhesive spray gun and nozzle attachment |
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| Process for preparing non-woven webs |
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Thermal processing apparatus and process
| Details |
Inventors: Koble, Jr., Terry A.; Dip, Anthony; Engdahl, Erik H.; Oliver, Ian R.; Ratliff, Christopher T.;
Assignee: Silicon Valley Group, Inc. (San Jose, CA)
Primary Examiner: Bueker; Richard
Assistant Examiner:
Attorney, Agent or Firm: Walker; William B.
Thermal treatment boat comprising a cylinder having a central axis and a plurality of band slots having opposed upper and lower surfaces in planes perpendicular to said central axis and spaced at predetermined locations along said central axis. At least one slot in each set extends around at least 180.degree. and less than of the full circumference of said cylinder. Pairs of adjacent band slots define an annular band therebetween. The height of each slot being from about 3.8 to 12.7 mm. Each of the bands having a height, Height.sub.Band, in mm, according to the equation: ##EQU1## wherein Height.sub.Band is always .ltoreq. wafer thickness; ColumnHeight is the total height of the cylinder, mm; BandSlotHeight is the height of the slot, mm; and NumberBands is the total number of bands in the treatment boat. The cylinder can include a wafer loading effector slot therethrough in a plane of the central axis extending along the length of the cylinder. Each band preferably includes wafer support means for supporting a wafer therein. The wafer support means preferably includes at least three inwardly extending projections. The spacing between the wafer edge and the cylinder wall is within the range of from about 1.5 to 6.3 mm. In the optimum process, the heat provided by the heater is sufficient to raise the temperature of the wafers from 21.degree. C. up to 1100.degree. C. at a rate of from 50.degree. C./min to 100.degree. C./min without causing mechanical damage from thermal stresses to the wafers. |
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DETAILED DESCRIPTION It is an object of this invention to provide a rapid heating and cooling thermal treatment apparatus and process with heating rates of from 50.
degree.
to 100.
degree.
C.
/min and cooling rates up to 50.
degree.
C.
/min.
It is another object of this invention to provide a thermal treatment apparatus and method which greatly reduces the temperature differences across the width and surfaces of a stack of wafers being processed, thereby greatly reducing or eliminating thermal stress damage to the wafers being treated.
In summary, the thermal treatment boat of this invention comprises a cylinder having a central axis and a plurality of sets of one or more slots (band slots) having opposed upper and lower surfaces in planes perpendicular to said central axis and spaced at predetermined locations along the central axis.
At least one band in each set extends around about at least fifty percent or 180.
degree.
and less than the entire circumference of said cylinder.
Adjacent band slots define an annular band between them.
The height of each slot is from about 3.
8 to 12.
7.
Each of the bands has a height, Height.
sub.
Band, in mm, according to the equation: ##EQU2## wherein Height.
sub.
Band is always.
gtoreq.
wafer thickness; ColumnHeight is the total height of the cylinder, mm; BandSlotHeight is the height of the slot, mm; and NumberBands is the total number of bands in the treatment boat.
A plurality of slots can be present in each plane.
In one embodiment, the cylinder includes a effector slot therethrough in a plane of the central axis extending along the length of the cylinder, the wafer loading or effector slot preferably having a width of from 5 to 20 mm.
The NumberBands can be from about 12 to about 100, provided that Height.
sub.
Band is at least equal to or greater than the wafer thickness.
Each band preferably includes wafer support means for supporting a wafer therein at a position which is substantially centered between the upper edge surface and said lower edge surface thereof
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