Vertical semiconductor furnace

DETAILED DESCRIPTION In accordance with one aspect of the invention, an improved furnace is provided.
The improved furnace is used to heat integrated circuit materials with the materials being carried by a quartz boat for insertion into the furnace within a quartz lined chamber for heating.
The improved furnace includes structure for inserting the quartz boat within the quartz lined chamber without contact therebetween to control the level of contaminants within the chamber and on the integrated circuit materials inserted within the chamber and on the integrated circuit materials inserted within the chamber.
In accordance with another apsect of the present invention, an improved furnace for heating integrated circuit materials is provided.
The materials are carried by a quartz boat for insertion into the furnace within a quartz lined chamber through an opening.
The improved furnace includes structure for supporting and vertically lowering the quartz boat through the opening into the chamber without contact between the boat and chamber walls to control the level of contaminants within the chamber and on the integrated circuit materials.
In accordance with yet another aspect of the present invention, an improved method of heating an integrated circuit material is provided.
The material is carried by a quartz boat and is heated within a quartz lined compartment within a furnace.
The method includes the step of inserting the boat within the compartment without contact between the boat and the walls to control contaminants within the furnace and on the materials.