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| Semiconductor device |
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Avalanche photo diode with quantum well layer
| Details |
Inventors: Matsushima, Yuichi; Sakai, Kazuo; Kushiro, Yukitoshi; Akiba, Shigeyuki; Noda, Yukio; Utaka, Katsuyuki;
Assignee: Kokusai Denshin Denwa Kabushiki Kaisha (Tokyo, JP)
Primary Examiner: James; Andrew J.
Assistant Examiner: Jackson; Jerome
Attorney, Agent or Firm: Lobato; Emmanuel J., Burns; Robert E.
An avalanche photodiode with a quantum well layer in which a thin film, periodic multilayer structure composed of two different semiconductors is formed in a carrier multiplying region, the effective ionization coefficient ratio of carriers is raised by a quantum well layer formed by the thin film, multilayer periodic structure, and only electrons of large ionization coefficient are injected into the multiplying region, thereby to reduce noise in the APD. |
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DETAILED DESCRIPTION It is an object of the present invention to provide an avalanche photodiode with a quantum well layer in which a thin film, periodic multilayer structure composed of two different semiconductors is formed in a carrier multiplying region, the effective ionization coefficient ratio of carriers is raised by a quantum well layer formed by the thin film, multilayer periodic structure, and only electrons of larger ionization coefficient are injected into the multiplying region, thereby to reduce noise in the APD.
In accordance with the present invention, there is provided an avalanche photodiode with a quantum well layer, comprising a first semiconductor layer for absorbing light to generate optically excited carriers; a quantum well layer formed by a thin film, periodic multilayer structure composed of second and third semiconductors for multiplying the optically excited carriers; and a pn junction interposed between the first semiconductor layer and the quantum well layer.
In an avalanche photodiode with a quantum well layer of this invention, the pn junction is formed in a semiconductor layer of a large forbidden band gap different from the first semiconductor so that only electrons may be injected into the quantum well layer.
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MEMS 
