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CMOS imager with storage capacitor
The present invention provides a CMOS imager having a storage capacitor connected to the fight sensitive node to improve collected charge storage. The storage capacitor ...
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Thin film transistor device and method of manufacturing the same
The object of the present invention is to provide a thin film transistor device in which both the n-type TFT and the p-type TFT are turned off at a predetermined gate ...
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Optical element in semiconductor laser device having a diffraction grating and improved resonance characteristics
Accordingly, an essential object of the present invention is to provide an improved semiconductor laser device in which Fabry-Perot resonance mode is suppressed, while ...
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Optically controlled phased array system and method
It is an object of this invention to provide an improved optically controlled phased array antenna system and method which utilizes the advantages of fiber optic lengths ...
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Novel high-speed integrated heterostructure transistors, photodetectors, and optoelectronic circuits
OF THE PREFERRED EMBODIMENTS The basic multilayer structure for the integrated heterojunction optoelectronic device of the present invention is illustrated in FIG. 1. F...
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Spatial light modulator using charge coupled device with quantum wells
What is claimed is: 1. An electro-optical device for providing spatial modulation of an incoming electromagnetic wave signal comprising a charge-coupled device being ...
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Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output
OF THE PREFERRED EMBODIMENTS FIG. 1 illustrates a focal plane cell embodying the present invention. Photons entering through a photogate 1 generate charge which is ...
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Cross-talk free, low-noise optical amplifier
It is an object of the present invention to use a segmented transverse lasing field to reduce crosstalk in optical amplifiers in wavelength divison multiplexed systems. ...
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Grating coupled vertical cavity optoelectronic devices
A semiconductor laser or detector has been invented which is a vertical cavity device constructed with a dual dielectric top Distributed Bragg Reflector (DBR) mirror ...
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Multibeam semiconductor laser, semiconductor light-emitting device and semiconductor device
What is claimed is: 1. A multi-beam semiconductor laser including nitride III-V compound semiconductor layers formed over one major surface of a substrate to form a ...
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