Home | Links | Contact Us | More About Intellectual Property | Bookmark
Search patents:
Home MEMS Backside-thinning-of-image-array-devices

 Method for manufacturing CMOS image sensor
OF THE PREFERRED EMBODIMENT Reference will now be made in detail to embodiments of the invention, ...


 Airbag system using three-dimensional acceleration sensor
The present invention relates to a three-dimensional acceleration sensor which can be used for an ...


 Method for fabricating a head/slider assembly integrated with a track-following micro actuator
It is, therefore, a primary object of the present invention to provide a head/slider assembly ...


 Low voltage micro-mirror array light beam switch
OF PREFERRED EMBODIMENTS OF THE INVENTION FIG. 1a discloses a sample array of 16 micro-mirrors 6 ...


 Long-wavelength semiconductor light emitting device and its manufacturing method
It is therefore an object of the present invention to provide a long-wavelength semiconductor light ...


 Method of producing a diaphragm on a substrate
We claim: 1. A method of producing on a substrate a diaphragm which is electrically isolated from ...


 MEMS sensor structure and microfabrication process therefor
The present invention provides a micro-electro-mechanical sensor structure with an improved design ...


 Electromechanical memory array using nanotube ribbons and method for making same
Preferred embodiments of the invention provide new electromechanical memory arrays and methods for ...


 Silicon light emitting device and a method of making the device
OF THE INVENTION Referring to the Figures, a light emitting device 10 comprises a substrate 12 ...


 Trench isolation method
Therefore, it is an object of the present invention to provide a trench isolation method which ...


 Backside thinning of image array devices

Details
Inventors: Costello, Kenneth A; Fairbairn, Kevin P.; Brown, David W.; Chung, Yun; Gober, Patricia; Yin, Edward;
Assignee: Intevac, Inc. (Santa Clara, CA)
Primary Examiner: Ngô; Ngân V.
Assistant Examiner:
Attorney, Agent or Firm: Cole; Stanley Z

Backthinning in an area selective manner is applied to imaging sensors 12 for use in electron bombarded devices. A further arrangement results in an array of collimators 51 aligned with pixels 42 or groups of pixels providing improved image contrast of such image sensor. Provision of a thin P-doped layer 52 on the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layer 52 optimizes electron collection at the pixel array.

DETAILED DESCRIPTION OF THE INVENTION The context of the invention is illustrated in FIG.
1 where there is shown an example of an electron bombarded active pixel array component including a vacuum enclosure 3 which houses a photocathode 12 such as a GaAs, an InP/InGaAs, a transferred electron photocathode, or a multi-alkali photocathode, in proximity focus with a specialized active pixel array sensor chip 13 which forms the anode for receiving the proximity focused photoelectrons from photocathode 12 to which an acceleration voltage 37 is applied.
In accordance with this invention the active pixel array sensor 13 is mounted with its backside 10 facing the photocathode 12.
Photoelectrons 15 are emitted from photocathode 12 in response to incident light illustrated as arrows designated 16.
Optical components, not shown, are typically employed to form an optical image on the photocathode.
Any projection system may be used to place an image on the photocathode.
The photoelectrons 15 are accelerated by an applied voltage to sufficient energy to allow electron gain in the chip in which the active pixel sensor 13 is found.
The accelerating voltage 17 (or photocathode bias from a power supply not shown) applied to the photocathode 12 is preferably negative with respect to the chip.
This permits biasing the chip to near, or at ground to simplify interfacing with other components.
Control signals and bias voltages 18 are applied to active pixel sensor 13 and a video output signal 20 may be taken off sensor 13.
The base of vacuum device 12 is a transparent faceplate 21 and vacuum enclosure sidewalls 22 extend between the transparent faceplate 21 on which the photocathode 12 is positioned and header assembly 23, on which the active pixel sensor chip 13 is positioned.
The header assembly 23 also provides means for electrical feedthroughs for applying control and bias voltages 18 to the active pixel array sensor chip 13.
The control electronics for reading out and operating the pixel array are conventional for the purpose and not essential to understanding the present invention



Related patents
  CMOS imager with storage capacitor
The present invention provides a CMOS imager having a storage capacitor connected to the fight sensitive node to improve collected charge storage. The storage capacitor ...
  Thin film transistor device and method of manufacturing the same
The object of the present invention is to provide a thin film transistor device in which both the n-type TFT and the p-type TFT are turned off at a predetermined gate ...
  Optical element in semiconductor laser device having a diffraction grating and improved resonance characteristics
Accordingly, an essential object of the present invention is to provide an improved semiconductor laser device in which Fabry-Perot resonance mode is suppressed, while ...
  Optically controlled phased array system and method
It is an object of this invention to provide an improved optically controlled phased array antenna system and method which utilizes the advantages of fiber optic lengths ...
  Novel high-speed integrated heterostructure transistors, photodetectors, and optoelectronic circuits
OF THE PREFERRED EMBODIMENTS The basic multilayer structure for the integrated heterojunction optoelectronic device of the present invention is illustrated in FIG. 1. F...
  Spatial light modulator using charge coupled device with quantum wells
What is claimed is: 1. An electro-optical device for providing spatial modulation of an incoming electromagnetic wave signal comprising a charge-coupled device being ...
  Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output
OF THE PREFERRED EMBODIMENTS FIG. 1 illustrates a focal plane cell embodying the present invention. Photons entering through a photogate 1 generate charge which is ...
  Cross-talk free, low-noise optical amplifier
It is an object of the present invention to use a segmented transverse lasing field to reduce crosstalk in optical amplifiers in wavelength divison multiplexed systems. ...
  Grating coupled vertical cavity optoelectronic devices
A semiconductor laser or detector has been invented which is a vertical cavity device constructed with a dual dielectric top Distributed Bragg Reflector (DBR) mirror ...
  Multibeam semiconductor laser, semiconductor light-emitting device and semiconductor device
What is claimed is: 1. A multi-beam semiconductor laser including nitride III-V compound semiconductor layers formed over one major surface of a substrate to form a ...

0.014

Archive: All patents - Links

Copyright (c)2006 Eipa-patents.org - All rights reserved