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Buffered-layer memory cell
| Details |
Inventors: Hsu, Sheng Teng; Li, Tingkai; Zhang, Fengyan; Pan, Wei; Zhuang, Wei-Wei; Evans, David R.; Tajiri, Masayuki;
Assignee: Sharp Laboratories of America, Inc. (Camas, WA)
Primary Examiner: Coleman; W. David
Assistant Examiner:
Attorney, Agent or Firm: Law Office of Gerald Maliszewski, Maliszewski; Gerald
A method is provided for forming a buffered-layer memory cell. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode; forming a memory-stable semiconductor buffer layer, typically a metal oxide, overlying the memory film; and, forming a top electrode overlying the semiconductor buffer layer. In some aspects of the method the semiconductor buffer layer is formed from YBa2Cu3O7-X (YBCO), indium oxide (In2O3), or ruthenium oxide (RuO2), having a thickness in the range of 10 to 200 nanometers (nm). The top and bottom electrodes may be TiN/Ti, Pt/TiN/Ti, In/TiN/Ti, PtRhOx compounds, or PtIrOx compounds. The CMR memory film may be a Pr1-XCaXMnO3 (PCMO) memory film, where x is in the region between 0.1 and 0.6, with a thickness in the range of 10 to 200 nm. |
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DETAILED DESCRIPTION The present invention provides a CMR memory device structure that can be reliably programmed using a bipolar pulse programming process.
Alternately, the device can be programmed using a uni-polar pulse programming process.
The flexibility in programming is a result of the device's unique buffered-layer design.
Accordingly, a method is provided for forming a buffered-layer memory cell.
The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode; forming a memory-stable semiconductor buffer layer, typically a metal oxide, overlying the memory film; and, forming a top electrode overlying the semiconductor buffer layer.
In some aspects of the method, the semiconductor buffer layer is formed from YBa2Cu3O7-X (YBCO), indium oxide (In2O3), or ruthenium oxide (RuO2), having a thickness in the range of 10 to 200 nanometers (nm).
The top and bottom electrodes may be TiN/Ti, Pt/TiN/Ti, In/TiN/Ti, PtRhOx compounds, or PtIrOx compounds.
The CMR memory film may be a Pr1-XCaXMnO3 (PCMO) memory film, where x is in the region between 0.
1 and 0.
6, with a thickness in the range of 10 to 200 nm.
However, other memory resistor materials are known.
Additional details of the above-described method, a method for programming a buffered-layer memory cell using either bipolar or uni-polar pulses, a buffered-layer memory cell device, and a buffered-layer RRAM are provided below.
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MEMS 
