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CMOS-imager-with-storage-capacitor

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CMOS imager with storage capacitor

Details

Inventors: Rhodes, Howard E.;
Assignee: Micron Technology, Inc. (Boise, ID)
Primary Examiner: Meier; Stephen D.
Assistant Examiner:
Attorney, Agent or Firm: Dickstein Shapiro Morin & Oshinsky, LLP

A CMOS imager having an improved signal to noise ratio and improved dynamic range is disclosed. The CMOS imager provides improved charge storage by fabricating a storage capacitor in parallel with the photocollection area of the imager. The storage capacitor may be a flat plate capacitor formed over the pixel, a stacked capacitor or a trench imager formed in the photosensor. The CMOS imager thus exhibits a better signal-to-noise ratio and improved dynamic range. Also disclosed are processes for forming the CMOS imager.

DETAILED DESCRIPTION The present invention provides a CMOS imager having a storage capacitor connected to the fight sensitive node to improve collected charge storage.
The storage capacitor is formed in parallel with the light sensitive node of the imager and may be any type of capacitor formed on the pixel cell over a non-light sensitive area.
Also provided are methods for forming the CMOS imager of the present invention.
Additional advantages and features of the present invention will be apparent from the following detailed description and drawings which illustrate preferred embodiments of the invention.

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