Circuitry for image sensors with avalanche photodiodes

DETAILED DESCRIPTION An first object of the present invention is a in-pixel circuit architecture for APDs operating in the linear regime that takes advantage of a large number of in-pixel CMOS devices without loss of Fill Factor.
A second object of the present invention is an in-pixel circuit architecture for APDs operating in the non-linear regime, also known as Geiger mode, that takes advantage of a large number of in-pixel CMOS devices without loss of Fill Factor.
A third object of the present invention is a first circuit architecture to take advantage of dense interconnects between in-pixel circuitry and peripheral circuitry of the sensor matrix.
A fourth object of the present invention is a second circuit architecture to take advantage of dense interconnects between in-pixel circuitry and peripheral circuitry of the sensor matrix.
The fifth object of the present invention is a third circuit architecture to take advantage of dense interconnects between in-pixel circuitry and peripheral circuitry of the sensor matrix.