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Cloverleaf microgyroscope with through-wafer interconnects and method of manufacturing a cloverleaf microgyroscope with through-wafer interconnects
| Details |
Inventors: Kubena, Randall L.; Stratton, Frederic P.; Chang, David T.;
Assignee: HRL Laboratories, LLC (Malibu, CA)
Primary Examiner: Mulpuri; Savitri
Assistant Examiner:
Attorney, Agent or Firm: Ladas & Parry LLP
The present invention relates to a method of manufacturing a cloverleaf microgyroscope containing an integrated post comprising: attaching a post wafer to a resonator wafer, forming a bottom post from the post wafer being attached to the resonator wafer, preparing a base wafer with through-wafer interconnects, attaching the resonator wafer to the base wafer, wherein the bottom post fits into a post hole in the base wafer, forming a top post from the resonator wafer, wherein the bottom and top post are formed symmetrically around the same axis, and attaching a cap wafer on top of the base wafer. |
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DETAILED DESCRIPTION The following disclosure provides the construction of a microgyroscope that has a single crystal silicon cloverleaf-shaped resonator and integrated post attached to the leaves.
The microgyroscope device is fabricated by bonding two separate substrates together preferably using a gold/gold thermocompression technique; one contains the cloverleaf resonator structures fabricated from SOI and bulk silicon substrates, and the other contains the support pillars, electrode metal, and through-wafer interconnects.
A fourth wafer containing an array of etched cavities is solder-bonded to the device wafer in a vacuum, thus hermetically sealing each individual microgyroscope.
The resonator wafer A, preferably a SOI wafer, is preferably prepared first.
On a bulk silicon base 1 having a preferable thickness of ≦500 μm, which is optionally lightly-doped bulk silicon about 1e15 cm-3, a silicon dioxide layer 2 having a preferable thickness of ≦2 μm is formed preferably by thermal oxidation at a temperature between 800° C.
and 1000° C.
On top of the silicon dioxide layer 2 a heavily doped silicon epi-layer, p-type, 1e19-1e20 cm-3 3 is provided having a preferable thickness of 10 μm to 20 μm, as shown in FIGS.
1a and 1b.
Then the cloverleaf petal and spring of the resonator wafer A is prepared.
Parts of the heavily doped silicon epi-layer 3 are preferably removed by photoresist lithography, deep reactive ion etching (DRIE) and photoresist removal, as shown in FIGS.
2a and 2b.
Photoresist lithography and DRIE are described in inter alia Veljko Milanovic et al.
"Deep Reactive Ion Etching for Lateral Field Emission Devices", IEEE Electron Device Letters, Vol.
21, No.
6, June 2000, which is incorporated herein by reference.
The process preferably comprises: 1.
The top silicon layer of the wafer is coated with a layer of photoresist.
2.
Light from an illuminator is projected through a mask that contains the pattern to be created on the wafer
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MEMS 
