 Electrochemical device |
| Accordingly, one object of the invention is to provide a means for increasing the durability of ... |
|
| Integrated thin-film solar battery |
| In view of the aforementioned related art, one object of the present invention is to provide a ... |
|
| Selectively activatable solar cells for integrated circuit analysis |
| The present invention is exemplified in a number of implementations and applications, some of which ... |
|
| Apparatus and method for fabricating a microbattery |
| In one embodiment, a set of four Si wafers is used to form the planar microbattery structure. The ... |
|
| Structure of thin-film lithium microbatteries |
| The highest capacity thin film cathode layers (LiCoO.sub.2) typically require an annealing step of 7... |
|
| Ship self-defense missile weapon system |
| A preferred embodiment of the present invention provides a ship self-defense missile (SSDM) weapon ... |
|
| Thin film solid oxide fuel cell and method for forming |
| OF THE INVENTION It is preferred to fabricate a TFSOFC with a thin electrolyte layer to reduce the ... |
|
| Fabrication of three-dimensional architecture for solid state radiation detectors |
| U.S. Patent No. 5,889,313 provided a three-dimensional solid-state radiation detector fabricated on ... |
|
| Solid state imaging device, method of making the same and imaging unit including the same |
| According to one aspect of the invention, a solid state imaging device includes a package substrate;... |
|
|
Cold-cathode ion source with a controlled position of ion beam
| Details |
Inventors: Maishev, Yuri; Ritter, James; Velikov, Leonid; Shkolnik, Alexander;
Assignee: Advanced Ion Technology, Inc. (Fremont, CA)
Primary Examiner: Bettendorf; Justin P.
Assistant Examiner:
Attorney, Agent or Firm:
A cold-cathode ion source with a closed-loop ion-emitting slit which is provided with means for generating a cyclically-variable, e.g., alternating or pulsating electric or magnetic field in an anode-cathode space. These means may be made in the form of an alternating-voltage generator which generates alternating voltage on one of the cathode parts that form the ion-emitting slit, whereas the other slit-forming part is grounded. The alternating voltage deviates the ion beam in the slit with the same frequency of the alternating voltage. In accordance with another embodiment, the aforementioned means may be an electromagnetic coil which generates a magnetic field which passes through the ion-emitting slit, thus acting on the condition of the spatial-charge formation and, hence, on concentration of ions in the ion beam. The cold-cathode ion source may be of any type, i.e., with the ion beam emitted in the direction perpendicular to the direction of drift of electrons in the ion-emitting slit or with the direction of emission of the beam which coincides with the direction of electron drift. |
|
DETAILED DESCRIPTION We claim: 1.
A method for controlling position of an ion beam on the surface of an object to be treated with said ion beam, comprising: providing a cold-cathode ion source with crossed electrical and magnetic fields and with at least one ion-emitting slit, said ion source having a voltage source, an anode connected to a positive potential of said voltage source; and a cathode which comprises at least two parts which are electrically isolated from each other and form said ion-emitting slit; at least one of said two parts being connected to said voltage source; activating said ion source and generating an ion beam which is emitted through said at least one ion-emitting slit toward said object, said ion beam being charged positively with respect to said at least one part of said cathode which is connected to said voltage source; applying a potential to said at least one part of said cathode from said voltage source for generating an electric field across said at least one ion-emitting slit; acting by said electric field onto said ion beam; and deviating said ion beam in a direction transverse to said direction of said ion beam.
2.
The method of claim 1, wherein said voltage source is an alternating voltage source having a voltage pulse with a positive half-wave and a negative halve wave, said electric field being generated only during said positive half-wave of said voltage pulse.
3.
A method of claim 1, wherein said voltage source comprises: a main voltage source having a main positive terminal and a main negative terminal, said main positive terminal of said first voltage source being connected to said anode; an additional voltage source having an additional positive terminal and an additional negative terminal; said at least two parts of said cathode being electrically isolated from one another, at least one of said two parts being connected to said additional power source; said ion beam being charged positively by said main voltage source with respect to said at least one part of said cathode which is connected to said additional voltage source; said additional voltage source generating an additional electric field across said at least one ion-emitting slit; said step of acting onto said ion beam being performed by said additional electric field
|
| Related patents |
|
|
Cryogenic annealing of sputtering targets
The present invention is directed to a method for cryogenically annealing a sputtering target to provide a uniformly dense molecular target structure. This method ...
|
|
|
Method of forming robust metal, metal oxide, and metal alloy layers on ion-conductive polymer membranes
What we claim is: 1. A dual beam assisted deposition process for the purpose of an ion-conducting membrane provided with a thin metal or metal oxide film comprising ...
|
|
|
Method for deposition of diamond-like carbon and silicon-doped diamond-like carbon coatings from a hall-current ion source
OF THE INVENTION A detailed description of the Hall-Current ion source of the present invention, its operation, and embodiments are set forth in U.S. Pat. No. 5,973,447,...
|
|
|
Polymer electrolyte fuel cell
OF THE PREFERRED EMBODIMENTS Referring to FIG. 3, there are shown relationships between the water transportation amount J.sub.M, the maximum water supply amount J.sub.A(...
|
|
|
Cold-cathode ion source with propagation of ions in the electron drift plane
OF THE INVENTION The invention will be now described in more detail with reference to different embodiments which differ from each other by mutual locations and ...
|
|
|
Apparatus for inductively-coupled-plasma-enhanced ionized physical-vapor deposition
The present invention provides an apparatus and method for processing a substrate such as a semiconductor wafer using physical-vapor deposition (PVD) (particularly ...
|
|
|
Universal cold-cathode type ion source with closed-loop electron drifting and adjustable ionization gap
OF THE INVENTION FIGS. 4 to 8----Ion-Beam Source with Anode Moveable with Respect to Cathode FIG. 4 is a sectional side view of an ion-beam source according to an ...
|
|
|
Supercapacitor structure
What is claimed is: 1. A supercapacitor structure formed as a unitary flexible laminate structure comprising: a) a first electrode member of first polarity, comprising a ...
|
|
|
Photovoltaic device, manufacturing method of photovoltaic device, photovoltaic device integrated with building material and power-generating apparatus
In view of the circumstances described above, an object of the present invention is to provide a photovoltaic device having excellent collective performance, that is, a ...
|
|
|
Battery system for implantable medical device
The present battery system provides a dual battery system for use within an implantable medical device. The battery housings of the system share a common wall. The ...
|
|
|
MEMS 
