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Semiconductor device and method of fabricating same |
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Trench isolation for micromechanical devices |
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Method of making diode having reflective layer |
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Cold-cathode ion source with propagation of ions in the electron drift plane
| Details |
Inventors: Maishev, Yuri; Ritter, James; Terentiev, Yuri; Velikov, Leonid;
Assignee: Advanced Ion Technology, Inc (Freemont, CA)
Primary Examiner: Bettendorf; Justin P.
Assistant Examiner:
Attorney, Agent or Firm: Zborovsky; I.
The ion source of the invention emits ion beams radially inwardly or radially outwardly from the entire periphery of the closed-loop ion-emitting slit. In one embodiment, a tubular or oval-shaped hollow body, which also functions as a cathode, contains a similarly-shaped concentric anode spaced from the inner walls of the cathode at a distance required to form an ion-generating and accelerating space. The cathode has a continuous ion-emitting slit which is aligned with the position of the anode and is concentric thereto. A magnetic-field generation means is located inside the ring-shaped anode. When the ion source is energized by inducing an magnetic field, connecting the anode to a positive pole of the electric power supply unit, the cathode to a negative pole of the power supply unit, and supplying a working medium into the hollow housing, the electrons begin to drift in the annular space between the anode and cathode in the same direction in which the ions are emitted from the annular slit. By rearranging positions of magnet, anode, and cathode, it is possible to provide emission of ions in the inward or outward direction for treating outer or inner surfaces of tubular objects. |
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DETAILED DESCRIPTION OF THE INVENTION The invention will be now described in more detail with reference to different embodiments which differ from each other by mutual locations and configurations of magnets, anodes, cathodes, ion-emitting slits, and electric power supply units. These differences determine the direction of emission of ions and performance characteristics of the ion sources. However, what is common for all the embodiments of the invention is that the ion-emitting slit has a closed-loop configuration and that the direction of emission of electrons lies in the plane of drift of electrons. FIGS. 4, 5 and 5A--A Single-Slit Ion Source of the Invention for Emission of Ion Beams in a Radial Outward Direction in a Plane of Drift of Electrons FIG. 4 is a sectional view of a closed-loop ion source of the invention for emission of ion beams in a radial outward direction in a plane of drift of electrons, and FIG. 5 is a sectional view of the ion source in the direction of line V--V of FIG. 4 illustrating an oval cross-section of the ion beam source housing, anode, magnet, and object being treated. The aforementioned parts may have a circular, oval, or any other suitable form. It is understood that, strictly speaking, oval or ellipse do not have a radial direction and that words are applicable to a circle only. However, for the same of convenience, here and hereinafter, including patent claims, the terms "radially inwardly" and "radially outwardly" will be used in connection with any closed-loop configuration of the ion-emitting slit from which the ion beams are emitted inwardly or outwardly perpendicular to the circumference of the ion-beam housing. In FIGS. 5 and 5A, which illustrate cross-sectional shapes of the parts of the ion source, those parts which have an oval shape are designated with an addition of subscripts . sub. ov whereas circular-shaped parts are designated with an addition of subscripts An ion source of this embodiment, which in general is designated by reference numeral 100, has a hollow housing 140 made of a magnetoconductive material which is used as a cathode
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