Electrode structure for a semiconductor devices

DETAILED DESCRIPTION Accordingly, a main object of the present invention is to provide an electrode structure for semiconductor devices, the semiconductor devices having low loss.
Another object of the invention is to provide an electrode structure for semiconductor devices, the semiconductor devices being capable of performing a high speed operation.
In order to achieve the objects above, there is provided an electrode structure for semiconductor devices according to the present invention, which comprises a semiconductor layer, a conductive layer disposed on one surface of the semiconductor layer, first regions which intervene between the layers and act as passages for minority carriers moving from the semiconductor layer to the conductive layer, and second regions which intervene between the layers so as to constitute passages for majority carriers between the semiconductor layer and the conductive layer, the first and second regions being adjacent to each other and being selectively formed on the semiconductor layer.
With the electrode structure as mentioned above, the passages for minority carriers are formed between the conductive layer and the semiconductor layer, the passages for the minority carriers being adjacent to the passages for majority carriers.
Therefore, no potential barrier for minority and majority carriers is formed between said layers, so that free movement of minority and majority carriers is not restricted at all.
At the same time, the electrode structure can efficiently absorb minority carriers out of the semiconductor layer.
The invention will be more fully understood from the following description taken by referring to the accompanying drawings.