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 Exposure method, exposure apparatus, and mask

Details
Inventors: Tsuchiya, Makoto; Nara, Kei; Fujimori, Nobutaka; Toguchi, Manabu; Seki, Masami;
Assignee: Nikon Corporation (Tokyo, JP)
Primary Examiner: Mathews; Alan A.
Assistant Examiner:
Attorney, Agent or Firm: Nixon & Vanderhye P.C.

An exposure method, exposure apparatus and mask are suitable for manufacturing an active matrix liquid crystal display including, for example, a gate electrode layer and a source/drain electrode layer. A stitching portion between unit patterns in a second layer is offset from the stitching portion in a first layer by a predetermined distance. The stitching portions of the second layer are always positioned over unit patterns of the first layer. Accordingly, the contrast gap that occurs at the stitching portion as a boundary is defined only by an error in the exposure position of the second layer. The contrast gap is not affected by an error in the exposure position of the first layer, unlike the conventional method. Because the contrast gap caused by the error in the exposure position of the first layer is eliminated, the total contrast gap that occurs at the stitching portion as a boundary is significantly reduced.

DETAILED DESCRIPTION This invention was conceived in view of the problems in the prior art, and it is an object of the invention to provide an exposure method, an exposure apparatus, and a mask that can reduce the extent of an artificial contrast gap that occurs in stitching portions.
It is another object of the invention to provide a projection exposure method that can prevent screen separation, which causes deterioration of the LCD image quality.
These and other aspects and advantages of the invention are achieved by providing an exposure method according to one aspect of the invention.
In the exposure method, a first layer exposure pattern having a first plurality of unit patterns is formed on a photosensitive substrate, and the first plurality of unit patterns are connected through at least one first layer stitching portion.
A second layer exposure pattern having a second plurality of unit patterns is formed on the photosensitive substrate overlaying the first layer exposure pattern, and the second plurality of unit patterns are connected through at least one second layer stitching portion.
In forming the second layer, the second layer stitching portion is formed offset from the first layer stitching portion.
In an exposure method according to another aspect of the invention, a first layer exposure pattern having a first plurality of unit patterns is formed on a photosensitive substrate, and the first plurality of unit patterns are connected through at least one first layer stitching portion.
A second layer exposure pattern having a second plurality of unit patterns is formed on the photosensitive substrate overlaying the first layer exposure pattern, and the second plurality of unit patterns are connected through at least one second layer stitching portion.
A contrast between the second plurality of unit patterns overlaying the first plurality of unit patterns is smoothed in accordance with the position of the second layer overlaying the first layer.
In preferred forms, the smoothing is achieved by offsetting the second layer stitching portion from the first layer stitching portion



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