Micro-electromechanical system device |
| OF THE DRAWINGS FIG. 3 illustrates an initial stage in the manufacture of a MEMS device 100. What ... |
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Optically controlled MEM switches |
| The present invention alleviates the above-noted problem of providing control lines for an array MEM... |
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Process for high yield fabrication of MEMS devices |
| The present invention provides a MEMS fabrication process that minimizes the thickness of the ... |
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Optical device, laser beam source, laser apparatus and method of producing optical device |
| The invention claimed is: 1. A method for producing an optical element, comprising: a step of ... |
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High aperture LCD with insulating color filters overlapping bus lines on active substrate |
| OF CERTAIN EMBODIMENTS OF THIS INVENTION Referring now more particularly to the accompanying ... |
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High aperture LCD with insulating color filters overlapping bus lines on active substrate |
| OF CERTAIN EMBODIMENTS OF THIS INVENTION Referring now more particularly to the accompanying ... |
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Method for integrating thermistor |
| The present invention introduces a new temperature sensing device and method for making such ... |
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Liquid crystal display device provided with auxiliary circuitry for reducing electrical resistance |
| The present invention has been made to solve the above problems, and an object of the invention is ... |
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Semiconductor memory device including Shadow RAM |
| It is an object of the invention to provide a semiconductor memory apparatus for preventing an ... |
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Probe look ahead: testing parts not currently under a probehead |
| The present invention provides a semiconductor substrate, a probe card, and a method for stressing ... |
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Exposure method, exposure apparatus, and mask
| Details |
Inventors: Tsuchiya, Makoto; Nara, Kei; Fujimori, Nobutaka; Toguchi, Manabu; Seki, Masami;
Assignee: Nikon Corporation (Tokyo, JP)
Primary Examiner: Mathews; Alan A.
Assistant Examiner:
Attorney, Agent or Firm: Nixon & Vanderhye P.C.
An exposure method, exposure apparatus and mask are suitable for manufacturing an active matrix liquid crystal display including, for example, a gate electrode layer and a source/drain electrode layer. A stitching portion between unit patterns in a second layer is offset from the stitching portion in a first layer by a predetermined distance. The stitching portions of the second layer are always positioned over unit patterns of the first layer. Accordingly, the contrast gap that occurs at the stitching portion as a boundary is defined only by an error in the exposure position of the second layer. The contrast gap is not affected by an error in the exposure position of the first layer, unlike the conventional method. Because the contrast gap caused by the error in the exposure position of the first layer is eliminated, the total contrast gap that occurs at the stitching portion as a boundary is significantly reduced. |
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DETAILED DESCRIPTION This invention was conceived in view of the problems in the prior art, and it is an object of the invention to provide an exposure method, an exposure apparatus, and a mask that can reduce the extent of an artificial contrast gap that occurs in stitching portions. It is another object of the invention to provide a projection exposure method that can prevent screen separation, which causes deterioration of the LCD image quality. These and other aspects and advantages of the invention are achieved by providing an exposure method according to one aspect of the invention. In the exposure method, a first layer exposure pattern having a first plurality of unit patterns is formed on a photosensitive substrate, and the first plurality of unit patterns are connected through at least one first layer stitching portion. A second layer exposure pattern having a second plurality of unit patterns is formed on the photosensitive substrate overlaying the first layer exposure pattern, and the second plurality of unit patterns are connected through at least one second layer stitching portion. In forming the second layer, the second layer stitching portion is formed offset from the first layer stitching portion. In an exposure method according to another aspect of the invention, a first layer exposure pattern having a first plurality of unit patterns is formed on a photosensitive substrate, and the first plurality of unit patterns are connected through at least one first layer stitching portion. A second layer exposure pattern having a second plurality of unit patterns is formed on the photosensitive substrate overlaying the first layer exposure pattern, and the second plurality of unit patterns are connected through at least one second layer stitching portion. A contrast between the second plurality of unit patterns overlaying the first plurality of unit patterns is smoothed in accordance with the position of the second layer overlaying the first layer. In preferred forms, the smoothing is achieved by offsetting the second layer stitching portion from the first layer stitching portion
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