Fabrication of a multi-structure ion sensitive field effect transistor with a pH sensing layer of a tin oxide thin film

DETAILED DESCRIPTION Therefore, the present invention seeks to solve the problems described in the prior art with one kind of sensing membrane material, tin oxide (SnO.
sub.
2).
The sensing characteristics of tin oxide is close to tantalum pentoxide.
It's fabricated by thermal evaporation or r.
f.
reactive sputtering.
The main advantage of the present invention is that a multi-structure ion sensitive field effect transistor with good characteristics can be fabricated from this kind of sensing membrane: SnO.
sub.
2 /SiO.
sub.
2 multi-structure ion sensitive field effect transistor or SnO.
sub.
2 /Si.
sub.
3 N.
sub.
4 /SiO.
sub.
2 multi-structure ion sensitive field effect transistor.
The further scope of applicability of the present invention will become apparent from the detailed description given hereinafter.
However, it should be understood that the detailed description and specific examples, while indicating preferred embodiments of the invention, are given by way of illustration only, since various changes and modifications within the spirit and scope of the invention will become apparent to those skilled in the art from this detailed description.