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Flip-chip light emitting diode and fabricating method thereof
| Details |
Inventors: Tsai, Tzong-Liang; Chang, Chih-Sung; Chen, Tzer-Perng;
Assignee: Epistar Corporation (Hsinchu, TW)
Primary Examiner: Lebentritt; Michael
Assistant Examiner: Stevenson; Andre'
Attorney, Agent or Firm: Ingrassia Fisher & Lorenz
A flip-chip light emitting diode and fabricating methods are disclosed. A soft transparent adhesive layer is utilized to past a transparent conductive substrate onto a light emitting diode epitaxy structure on a substrate, and the substrate is next removed entirely. Then, a mesa-etching process is performed to form a first top surface and a second top surface on the light emitting diode epitaxy structure for respectively exposing an n-type layer and a p-type layer in the light emitting diode epitaxy structure. Next, a metal reflective layer and a barrier layer are formed on the light emitting diode epitaxy structure in turn, and electrodes are finally fabricated on the barrier layer. |
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DETAILED DESCRIPTION One aspect of the present invention is to provide a flip-chip LED with the superiority of the flip-chip structure, and to efficiently increase the light output intensity of the LED, the product quality and brightness of the LED is thereby greatly improved.
A metal reflective layer of the LED of the present invention has a high reflectivity, results in the light from the LED epitaxy structure to the electrodes reflects to the internal medium of the LED, the brightness of the LED is thereby increased.
The interface of the LED epitaxy structure and the transparent substrate is rough, the total reflection phenomenon is thereby reduced and the light extraction efficiency of the LED is improved.
Moreover, the transparent substrate has a rough surface, the total reflection phenomenon is thereby reduced and the light output intensity of the LED is improved.
Another aspect of the present invention is to provide a method for fabricating a flip-chip LED.
The LED is supported by the transparent substrate instead of the traditional substrate, so that most light emitted from the LED is able to pass through the transparent substrate and be successfully output outwards.
Thus, the superiority of the flip-chip LED can be hold for promoting the device reliability, and the light output intensity of the flip-chip LED is enhanced.
According to a fabricating method of the present invention, a second semiconductor layer (e.
g.
, p-type semiconductor layer) is below the first semiconductor layer (e.
g.
, n-type semiconductor layer) through a "twice reverse" process, the distance between the active layer and the transparent substrate thereby increases and the problem of total reflection phenomenon is reduced.
The present invention makes use of the light emitted from the LED more effectively for improving the light output intensity greatly, and the brightness of LED is increased.
A flip-chip LED of the present invention includes a transparent substrate, an LED epitaxy structure, a metal reflective layer, a first electrode and a second electrode
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MEMS 
