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Gallium arsenide solar cell system
| Details |
Inventors: Ellion, M. Edmund; Wolff, George;
Assignee: Hughes Aircraft Company (Los Angeles, CA)
Primary Examiner: Weisstuch; Aaron
Assistant Examiner:
Attorney, Agent or Firm: Mitchell; S. M., Meltzer; M. J., Karambelas; A. W.
A solar cell array utilizing geometrically alternating, laterally disposed N-on-P and P-on-N gallium arsenide solar cells is disclosed. Improved array efficiency is achieved by placing adjacent solar cells in substantial contact with each other and eliminating bus connections on the top surfaces. This is accomplished by providing the solar cells with a lateral cross-sectional configuration of a parallelogram with the N-on-P solar cells slanted in one lateral direction and the P-on-N solar cells slanted in the opposite direction. The top surfaces of adjacent, contacting solar cells are electrically connected by extending a connector grid across the top surfaces. Strip connectors are used to join the bases of adjacent solar cells. |
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DETAILED DESCRIPTION The present invention resides in an improved gallium arsenide solar cell, and solar cell arrays using the improved solar cell.
The improved solar cell incorporates a modified construction which achieves substantially the same performance as conventional gallium arsenide solar cells, and in addition allows the interconnection of solar cells in an array to be accomplished in a manner which increases the overall output efficiency of the array.
Arrays employing the improved solar cell require less complex interconnection hardware and procedures, allow closer packing of the individual solar cells to achieve increased electrical output per unit area of the array, and provide decreased problems resulting from differential thermal expansion of the individual cells in the array.
The solar cell arrays of the invention can otherwise be used in a fashion identical with that of existing solar cell arrays, and have the same resistance to radiation damage.
In accordance with the invention, an N-on-P gallium arsenide solar cell comprises a single crystal gallium arsenide substrate, a single crystal layer of p+ gallium aluminum arsenide epitaxially overlying the substrate, a single crystal layer of p-type gallium arsenide epitaxially overlying the layer of gallium aluminum arsenide, and a single crystal layer of n-type gallium arsenide epitaxially overlying the layer of p-type gallium arsenide.
The cell has a lateral cross-sectional shape of a parallelogram to allow good electrical contact between adjacent cells at the desired location without shorting problems.
In operation, the n-type gallium arsenide layer faces the sun.
This N-on-P cell achieves similar electrical output and resistance to radiation damage as conventional P-on-N gallium arsenide solar cells.
The N-on-P solar cell is covered with a transparent cover such as glass to protect it and allow handling.
The layer of p-type gallium arsenide is typically about 0.
5 micrometers thick to limit space radiation degradation, and the layer of n-type gallium arsenide is typically about 10 micrometers thick
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MEMS 
