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Interposer and methods for fabricating same
| Details |
Inventors: Akram, Salman; Wood, Alan G.; Farnworth, Warren M.;
Assignee: Micron Technology, Inc. (Boise, ID)
Primary Examiner: Sherry; Michael
Assistant Examiner: Patel; Paresh
Attorney, Agent or Firm: TraskBritt
An interposer including a fence that receives and aligns a semiconductor device, such as a flip-chip type semiconductor device, with an interposer substrate. The fence may include edges that are configured to progressively align a semiconductor device with the interposer substrate. The fence may also include one or more laterally recessed regions to facilitate rough alignment of a semiconductor device with the interposer substrate. Methods for fabricating the fence include the use of stereolithographic and molding processes. When stereolithography is used to fabricate the fence, a machine vision system that includes at least one camera operably associated with a computer may be used to control a stereolithography apparatus and facilitates recognition of the position and orientation of interposer substrates on and around which material is to be applied in one or more layers to form the fence. As a result, the interposer substrates need not be precisely mechanically aligned. |
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DETAILED DESCRIPTION OF THE INVENTION The Interposer FIGS.
1, 1A, 1B, and 2 depict an exemplary interposer 100 of the present invention.
Interposer 100 includes an interposer substrate 110 with contact pads 102 on a top surface 104 thereof and contact pads 106 on a bottom surface 108 thereof.
Contact pads 102 may be recessed relative to top surface 104, as illustrated in FIG.
2.
Contact pads 102 on top surface 104 of interposer substrate 110 communicate with corresponding contact pads 106 on bottom surface 108 by way of vias 118 filled or lined with metal 148 or another conductive material.
Conductive structures 142, such as balls, bumps, or conductive pillars, of a conductive material, such as a solder, a metal, a metal alloy, a conductor-filled epoxy, a conductive epoxy, or a conductive (e.
g.
, z-axis) elastomer, are secured to and protrude from contact pads 106 and from interposer 100.
Interposer substrate 110 may be fabricated from any suitable material for use in semiconductor device applications, such as a semiconductor material (e.
g.
, silicon, gallium arsenide, indium phosphide), ceramics, polymers, or other materials that are used as substrates in fabricating semiconductor devices and carrier substrates.
Interposer 100 also includes a fence 120 disposed on top surface 104 of interposer substrate 110.
A periphery 126 of fence 120 is raised relative to top surface 104.
Interior side walls 128 of raised periphery 126 form a receptacle 130, which is configured to receive a semiconductor device 150 to be tested.
Preferably, receptacle 130 is also configured to align a semiconductor device 150 disposed face-down therein with interposer substrate 110, conductive structures 152 protruding from semiconductor device 150 being aligned with corresponding contact pads 102 on top surface 104 of interposer substrate 110.
Interior side walls 128 may taper inward toward top surface 104 so as to facilitate the insertion of an off-center semiconductor device 150 into receptacle 130 and the alignment of such an off-center semiconductor device 150 with top surface 104
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MEMS 
