Keepers for MRAM electrodes

DETAILED DESCRIPTION A magnetic memory array, preferably comprising an MRAM, with a series of top electrodes in contact with a magnetic keeper on at least one surface, a series of bottom electrodes and magnetic bit regions located therebetween is described in accordance with the current invention.
The magnetic bit regions may comprise tunneling magnetoresistance or giant magnetoresistance structures.
In an MRAM device, the structure of a magnetic keeper for the top conductor made by a damascene process includes stacked layers of barrier and magnetic materials, at least a portion of the layers magnetically shielding at least one surface of the top conductor.
A method of forming a magnetic keeper for a top electrode in an MRAM device is also described, which includes depositing an insulating layer over a magnetic storage element, etching and then filling a damascene trench with a conductive material, planarizing to remove the conductive material from over the insulating layer and then depositing a magnetic material over the conductive material.