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Light emitting device
| Details |
Inventors: Yamada, Motokazu;
Assignee: Nichia Corporation (Tokushima, JP)
Primary Examiner: Baumeister; Bradley W.
Assistant Examiner:
Attorney, Agent or Firm: Volentine Francos, PLLC
First and second well layers of a light emitting device emit light of different peak wavelengths so as to produce a mixed light, such as white light having high luminous intensity and high luminous efficiency. A color rendering property of the device can be controlled by adjusting the ratio of the growth numbers of the first and second well layers, and/or the thickness of the barrier layers sandwiching the well layers. The color rendering property can also be controlled by forming the second well layer so as to have a degree of asperity greater than that of the first well layer, or so that a degree of area occupied by dished portions having a thickness which is less than half of an average thickness over a total surface is not less than 10%. |
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DETAILED DESCRIPTION The first object of the present invention is to provide a light emitting device including at least two well layers made of nitride compound semiconductor emitting different color light due to different In composition ratios to so that white light can be obtained by mixing the different color light.
The second object of the present invention is to provide a light emitting device including at least one of first and second well layers where the second well layer has rougher surface than that of the first well layer to improve a luminous efficiency.
The third object of the present invention is to provide a light emitting device further including a first barrier layer containing Al and second barrier layer substantially not containing Al, which are formed on each well layer to reduce the forward voltage thereby improve the luminous efficiency.
The light emitting device according to an aspect of the present invention, comprises an active layer of a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer; the active layer including, at least one of first well layers made of nitride compound semiconductor containing In, and at least one of second well layers made of nitride compound semiconductor containing In, the second well layer emitting light having a principal peak wavelength longer than that of the first well layer.
When the principal peak wavelength of the first and second well layers are selected such that they are complementary colors each other, and thus a white color light can be obtained by mixing the two color lights.
The light emitting device according to another aspect of the present invention, is characterized in that the second well layer is disposed between the first well layer and the p-type semiconductor layer.
In general, it is very difficult to grow the nitride compound semiconductor containing In.
As the In composition ratio within the well layer is higher, the light emitted by the well layer has a longer wavelength and its crystallinity is worse so that the luminous efficiency is also reduced
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