Light-emitting diode and the manufacturing method of the same

DETAILED DESCRIPTION To solve the problems in the existing manufacturing procedures, the invention provides an LED and the manufacturing method thereof.
A GaN thick film with a slant surface is formed on a substrate surface.
Utilizing special properties of GaN epitaxy, an epitaxial slant surface is naturally formed.
The GaN thick film is further grown with an LED structure, forming an LED crystal.
Therefore, there is no need to use additional mechanical machining to make an LED structure with a slant surface.
The LED formed using the above method is comprised of a substrate with a GaN thick film formed on the surface and a diode structure formed on the GaN thick film.
The side surface of the GaN thick film and the substrate surface have an angle naturally formed due to the special crystal property of GaN.
The GaN thick film is a mixture of several III-V family compounds.
For example, the AlXGa(1-X-Y)InYN film has 0≦X,Y<1 and 0≦X+Y<1.
The diode structure formed on the GaN thick film surface consists of an n-GaN-series III-V family compound and a p-GaN-series III-V family compound.
In particular, the n-GaN-series III-V family compound and the p-GaN-series III-V family compound are in electrically communications with low-resistance ohmic contact electrodes to provide a forward bias.
The diode structure further contains an active layer between the n-GaN-series III-V family compound and the p-GaN-series III-V family compound as its light-emitting region.
Moreover, according to the disclosed method, the low-resistance ohmic contact electrodes of the n-GaN-series III-V family compound, the active layer, and the p-GaN-series III-V family compound can be formed on the upper and lower sides of the LED.
This means can shrink the size of the device, increasing the light emission efficiency and yield.