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Low Cu percentages for reducing shorts in AlCu lines
| Details |
Inventors: Iggulden, Roy C.; Shafer, Padraic; Wong, Kwong Hon; Iwatake, Michael M.; Strane, Jay W.; Goebel, Thomas; Miura, Donna D.; Dziobkowski, Chet; Robl, Werner; Hughes, Brian;
Assignee: Infineon Technologies AG (Munich, DE); International Business Machines Corporation (Armonk, NY)
Primary Examiner: Olsen; Allan
Assistant Examiner:
Attorney, Agent or Firm: Slater & Matsil, L.L.P.
In a method of fabricating a metallization structure during formation of a microelectronic device, the improvement of reducing metal shorts in blanket metal deposition layers later subjected to reactive ion etching, comprising: a) depositing on a first underlayer, a blanket of an aluminum compound containing an electrical short reducing amount of an alloy metal in electrical contact with the underlayer; b) depositing a photoresist and exposing and developing to leave patterns of photoresist on the blanket aluminum compound containing an electrical short reducing amount of an alloy metal; and c) reactive ion etching to obtain an aluminum compound containing an alloy metal line characterized by reduced shorts in amounts less than the aluminum compound without said short reducing amount of alloy metal. |
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DETAILED DESCRIPTION One object of the present invention is to provide an AlCu metallization scheme for blanket metal deposition layers subjected to reactive ion etching that lessens or eliminates poor functional yield, a poor processing window and numerous Cu rich defects during microelectronic fabrication.
Another object of the present invention is to provide an AlCu metallization scheme for blanket metal deposition layers subjected to reactive ion etching, that uses Cu percentages lower than is normally the case in AlCu lines to improve functional yield during microelectronic fabrication.
A further object of the present invention is to provide an AlCu metallization scheme for blanket metal deposition layers subjected to reactive ion etching that decreases the Cu percentage in the linewidth wherein the functional yield is markedly improved by reducing the metal shorts.
In general, the invention is accomplished by: a) depositing on a first underlayer, a blanket of an aluminum compound containing an electrical short reducing amount of an alloy metal in electrical contact with said underlayer; b) depositing a photoresist and exposing and developing to leave patterns of photoresist on the blanket aluminum compound containing an electrical short reducing amount of an alloy metal; and c) reactive ion etching to obtain an aluminum compound containing an alloy metal line characterized by reduced shorts in amounts less than said aluminum compound without said short reducing amount of alloy metal.
In a second embodiment of the invention process, in step b) an anti-reflective coating (ARC) is deposited followed by depositing the photoresist and exposing and developing to leave said patterns.
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MEMS 
