MRAM device fabricated using chemical mechanical polishing

DETAILED DESCRIPTION The present invention provides a method of forming an MRAM cell which minimizes the occurrence of electrical shorts during fabrication.
In an exemplary embodiment of the present invention, a first conductor in a trench is provided in an insulating layer and an upper surface of the insulating layer and the first conductor are planarized.
Then, a first dielectric layer is deposited over the first conductor and insulating layer to a thickness at least greater than the thickness of an MRAM cell to be formed.
The first dielectric layer is then patterned and etched to form openings for the cells over the first conductor.
Then, the magnetic layers comprising the MRAM cell are consecutively formed within the openings and over the first dielectric layer.
Then, a second dielectric layer is formed over the magnetic layers.
The second dielectric layer and the magnetic layers are then removed down to the top surface plane of the first dielectric layer to form the MRAM cells.
Any, unwanted corners of the cell are removed, for example, by oxidation.
The above advantages and features of the invention will be more clearly understood from the following detailed description which is provided in connection with the accompanying drawings.