Magnetic memory cell having magnetic flux wrapping around a bit line and method of manufacturing thereof

DETAILED DESCRIPTION OF THE DRAWING FIG.
1 illustrates a top view of a portion of a magneto-electronic component 100.
As an example, magneto-electronic component 100 can be a magnetic memory component such as an MRAM, or magneto-electronic component 100 can be some other type of magnetic transducer.
FIGS.
2, 3, and 4 illustrate various cross-sectional views of a portion of magneto-electronic component 100 taken along a section lines 2--2, 3--3, and 4--4, respectively, in FIG.
1.
Magneto-electronic component 100 comprises a substrate 200 and, optionally, an electrically insulative layer 210 located over substrate 200.
As an example, substrate 200 can be comprised of a semiconductor material or an electrically insulative material.
As an example, electrically insulative layer 210 can be comprised of an electrically insulative material such as silicon dioxide, silicon nitride, Tetra-Ethyl-Ortho-Silicate (TEOS), or the like.
Electrically insulative layer 210 can be eliminated if substrate 200 is electrically insulative.
Magneto-electronic component 100 also comprises a first plurality of bit lines 120 for generating magnetic fields.
Bit lines 120 are located over electrically insulative layer 210 and substrate 200.
In the preferred embodiment, each of bit lines 120 are substantially identical and parallel to each other and can be manufactured simultaneously with each other, as explained in more detailed hereinafter.
Bit lines 120 are also referred to as current lines.
Bit lines 120 are comprised of an electrically conductive material.
The electrically conductive material can be comprised of, for example, copper or aluminum.
Each of bit lines 120 have a height and a width less than or equal to approximately one micrometer and a length significantly greater than one micrometer.
As an example, each of bit lines 120 can have a height of approximately four hundred nanometers and a width of approximately four hundred nanometers.
Magneto-electronic component 100 further comprises a plurality of bits or multi-state magnetic memory cells 140 spaced across bit lines 120