Magnetic random access memory having digit lines and bit lines with shape and induced anisotropy ferromagnetic cladding layer and method of manufacture

DETAILED DESCRIPTION OF THE DRAWING FIGURES FIG.
1 illustrates a top view of a portion of a micromachined magneto-electronic component 100, and FIG.
2 illustrates a cross-sectional view of a portion of micromachined magneto-electronic component 100 taken along a section line 2--2 in FIG.
1.
As an example, micromachined magneto-electronic component 100 can be a magnetic memory component such as an MRAM, or micromachined magneto-electronic component 100 can be some other type of magnetic transducer.
Micromachined magneto-electronic component 100 comprises a substrate 200 and, optionally, an electrically insulative layer 210 located over substrate 200.
As an example, substrate 200 can be comprised of a semiconductor material or an electrically insulative material.
As an example, electrically insulative layer 210 can be comprised of an electrically insulative material such as silicon dioxide or silicon nitride.
Electrically insulative layer 210 can be eliminated if substrate 200 is electrically insulative.
Micromachined magneto-electronic component 100 also comprises a first plurality of digit lines 120 located over electrically insulative layer 210 and substrate 200.
In the preferred embodiment, each of digit lines 120 are substantially identical and parallel to each other and can be manufactured simultaneously with each other, as explained in more detail hereinafter.
Micromachined magneto-electronic component 100 further comprises a plurality of bits or multi-state magnetic memory cells 140 spaced across or located over digit lines 120.
In the preferred embodiment, magnetic memory cells 140 are arranged in a square or rectangular grid pattern over digit lines 120.
As known in the art, portions of magnetic memory cells 140 have a fixed or set magnetic direction.
These portions of the magnetic memory cells are referred to as the "fixed layers" within magnetic memory cells 140.
As known in the art and as an example, the fixed layers can include an antiferromagnetic layer.
Magnetic memory cells 140 also comprise, among other features, "free layers" having adjustable magnetic directions that can be parallel or anti-parallel to the magnetic directions of the fixed layers in magnetic memory cells 140