Apparatus and method for fabricating a microbattery |
| In one embodiment, a set of four Si wafers is used to form the planar microbattery structure. The ... |
|
Structure of thin-film lithium microbatteries |
| The highest capacity thin film cathode layers (LiCoO.sub.2) typically require an annealing step of 7... |
|
Ship self-defense missile weapon system |
| A preferred embodiment of the present invention provides a ship self-defense missile (SSDM) weapon ... |
|
Thin film solid oxide fuel cell and method for forming |
| OF THE INVENTION It is preferred to fabricate a TFSOFC with a thin electrolyte layer to reduce the ... |
|
Fabrication of three-dimensional architecture for solid state radiation detectors |
| U.S. Patent No. 5,889,313 provided a three-dimensional solid-state radiation detector fabricated on ... |
|
Solid state imaging device, method of making the same and imaging unit including the same |
| According to one aspect of the invention, a solid state imaging device includes a package substrate;... |
|
Arrays of stacked metal coordination compounds |
| This invention pertains to a novel process for preparing arrays of metal coordination compounds ... |
|
Micro-machined electromechanical system (MEMS) accelerometer device having arcuately shaped flexures |
| The present invention overcomes limitations of the prior art for providing proof mass suspension in ... |
|
Semiconductor device and method of fabricating same |
| It is an object of the present invention to provide a method of fabricating TFTs in which the ... |
|
|
Method for deposition of diamond-like carbon and silicon-doped diamond-like carbon coatings from a hall-current ion source
| Details |
Inventors: Mahoney, Leonard Joseph; Brown, David Ward; Petrmichl, Rudolph Hugo;
Assignee: Diamonex, Incorporated (Allentown, PA)
Primary Examiner: King; Roy V.
Assistant Examiner:
Attorney, Agent or Firm: Coudert Brothers
A unique Hall-Current ion source apparatus is used for direct ion beam deposition of DLC coatings with hardness values greater than 10 GPa and at deposition rates greater than 10 .ANG. per second. This ion source has a unique fluid-cooled anode with a shadowed gap through which ion sources feed gases are introduced while depositing gases are injected into the plasma beam. The shadowed gap provides a well maintained, electrically active area at the anode surface which stays relatively free of non-conductive deposits. The anode discharge region is insulatively sealed to prevent discharges from migrating into the interior of the ion source. A method is described in which a substrate is disposed within a vacuum chamber, coated with a coating of DLC or Si-DLC at a high deposition rate using a Hall-Current ion source operating on carbon-containing or carbon-containing and silicon-containing precursor gases, respectively. The method is particularly advantageous for producing thin, hard, wear resistant DLC and Si-DLC coatings for magnetic transducers and media used for magnetic data storage applications. |
|
DETAILED DESCRIPTION OF THE INVENTION A detailed description of the Hall-Current ion source of the present invention, its operation, and embodiments are set forth in U. S. Pat. No. 5,973,447, the detailed description of which is incorporated herein by reference. FIG. 1 illustrates one particular axisymmetric embodiment of the Hall-Current ion source. The apparatus 10 is comprised of the basic components of the closed path Hall-Current ion source apparatus. Hall-Current ion source 10 comprises cathode assembly 12, keeper assembly 13, magnetic field circuit assembly and electromagnet 14, anode assembly 16, and separate power supply means (not shown) for supplying a voltage to drive cathode electron emitter source 18 and power supply means (not shown) to drive anode 16 and electromagnet 14. The magnetic field circuit which is comprised of a water-cooled magnetic core assembly 20, back plate 22, outer shell 24, outer pole plate 26 and inner pole piece 28 is driven by electromagnet 14 positioned within the center of cylindrical ion source housing assembly 10. The power supply means supplies DC, AC, RF, pulsed voltage wave forms or combinations of such voltage wave forms, although, DC and pulsed-DC are conventionally used. The nonmagnetic stainless steel anode assembly 16 comprises inner anode ring 30 and outer anode ring 32, gap 34 defined by the alignment of rings 30 and 32, gas distribution manifold or injection ring 40 supplied by an electrically isolated gas feed line 42. Several gas injection holes are sized and spaced so as to uniformly distribute gas from manifold 40 into gap 34. Anode 16 also includes two water cooling channels. Anode assembly 16 is held together by two circular arrays of fasteners, e. g. , shoulder screws 44 and is isolated from the magnetic circuit assembly by inner insulator rings 48 and outer insulators 50, which are typically made of high temperature ceramic. Anode assembly 16 is attached to the underside of flange assembly 60 by several fasteners 62 and insulators 64
|
| Related patents |
|
|
Polymer electrolyte fuel cell
OF THE PREFERRED EMBODIMENTS Referring to FIG. 3, there are shown relationships between the water transportation amount J.sub.M, the maximum water supply amount J.sub.A(...
|
|
|
Cold-cathode ion source with propagation of ions in the electron drift plane
OF THE INVENTION The invention will be now described in more detail with reference to different embodiments which differ from each other by mutual locations and ...
|
|
|
Apparatus for inductively-coupled-plasma-enhanced ionized physical-vapor deposition
The present invention provides an apparatus and method for processing a substrate such as a semiconductor wafer using physical-vapor deposition (PVD) (particularly ...
|
|
|
Universal cold-cathode type ion source with closed-loop electron drifting and adjustable ionization gap
OF THE INVENTION FIGS. 4 to 8----Ion-Beam Source with Anode Moveable with Respect to Cathode FIG. 4 is a sectional side view of an ion-beam source according to an ...
|
|
|
Supercapacitor structure
What is claimed is: 1. A supercapacitor structure formed as a unitary flexible laminate structure comprising: a) a first electrode member of first polarity, comprising a ...
|
|
|
Photovoltaic device, manufacturing method of photovoltaic device, photovoltaic device integrated with building material and power-generating apparatus
In view of the circumstances described above, an object of the present invention is to provide a photovoltaic device having excellent collective performance, that is, a ...
|
|
|
Battery system for implantable medical device
The present battery system provides a dual battery system for use within an implantable medical device. The battery housings of the system share a common wall. The ...
|
|
|
Electrochemical device
Accordingly, one object of the invention is to provide a means for increasing the durability of multilayer electrochemical systems capable of reversibly inserting ions, ...
|
|
|
Integrated thin-film solar battery
In view of the aforementioned related art, one object of the present invention is to provide a sputtering-deposition method capable of preventing a conducive layer from ...
|
|
|
Selectively activatable solar cells for integrated circuit analysis
The present invention is exemplified in a number of implementations and applications, some of which are summarized below. In connection with the post-manufacturing ...
|
|
|