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Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor
| Details |
Inventors: Bader, Stefan; Fehrer, Michael; Hahn, Berthold; Harle, Volker; Lugauer, Hans-Ju;
Assignee: Osram GmbH (Regensburg, DE)
Primary Examiner: Smith; Matthew
Assistant Examiner: Malsawma; Lex H.
Attorney, Agent or Firm: Greenberg; Laurence A. Stemer; Werner H. Locher; Ralph E.
A method for fabricating a radiation-emitting semiconductor chip having a thin-film element based on III V nitride semiconductor material includes the steps of depositing a layer sequence of a thin-film element on an epitaxy substrate. The thin-film element is joined to a carrier, and the epitaxy substrate is removed from the thin-film element. The epitaxy substrate has a substrate body made from PolySiC or PolyGaN or from SiC, GaN or sapphire, which is joined to a grown-on layer by a bonding layer, and on which the layer sequence of the thin-film element is deposited by epitaxy. |
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DETAILED DESCRIPTION It is accordingly an object of the invention to provide a method for fabricating a radiation-emitting semiconductor chip based on III V nitride semiconductor that overcomes the above-mentioned disadvantages of the prior art methods and devices of this general type, which is technically simple and therefore inexpensive to produce and has a high external quantum efficiency.
With the foregoing and other objects in view there is provided, in accordance with the invention, a method for fabricating a radiation-emitting semiconductor chip.
The method includes providing an epitaxy substrate having a substrate body made from PolySiC or PolyGaN, a bonding layer disposed on the substrate body, and a grown-on layer bonded to the substrate body by the bonding layer.
A layer sequence forming a thin-film element is deposited on the grown-on layer by epitaxy, the thin-film element being based on a III V nitride semiconductor material.
The thin-film element is joined to a carrier and then the epitaxy substrate is removed from the thin-film element.
According to the invention, it is provided for the radiation-emitting semiconductor chip based on III V nitride semiconductor material to be formed as a thin-film element.
In this context, the term thin-film element is understood as meaning a sequence of semiconductor layers which consists substantially only of a stack of epitaxy layers based on III V nitride semiconductor material.
The thin-film element contains a plurality of III V nitride semiconductor epitaxy layers, the thin-film element being delimited on one side by an n-conducting epitaxy layer and on the opposite side by a p-conducting epitaxy layer.
The p-conducting side of the thin-film element is applied to a conductive carrier, which has a mounting surface for the thin-film element and can preferably be used at the same time to make contact with the thin-film element.
A corresponding contact surface is formed on the n-conducting side of the thin-film element.
In the text that follows, the term "contact surface" without further information relates to the contact surface
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MEMS 
