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Home MEMS Method-for-fabricating-semiconductor-device-and-method-for-producing-liquid-crystal-display-apparatus

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 Method for fabricating semiconductor device and method for producing liquid crystal display apparatus

Details
Inventors: Yoshinouchi, Atsushi; Hosoda, Takeshi; Yamamoto, Tomohiko;
Assignee: Sharp Kabushiki Kaisha (Osaka, JP)
Primary Examiner: Bowers; Charles
Assistant Examiner: Christianson; Keith
Attorney, Agent or Firm: Nixon & Vanderhye P.C.

A method for fabricating a semiconductor device includes the steps of forming a semiconductor film containing silicon, implanting impurity elements to the semiconductor film, performing a dehydrogenation treatment to the semiconductor film, and activating the impurity elements in the dehydrogenated semiconductor film.

DETAILED DESCRIPTION A method for fabricating a semiconductor device according to the invention includes the steps of forming a semiconductor film containing silicon, implanting impurity elements to the semiconductor film, performing a dehydrogenation treatment to the semiconductor film, and activating the impurity elements in the dehydrogenated semiconductor film.
In one embodiment of the invention, the dehydrogenation treatment reduces the amount of hydrogen in the semiconductor film containing silicon to 5.
times.
10.
sup.
19 /cm.
sup.
3 or less.
In another embodiment of the invention, the activation is performed by laser irradiation, and the dehydrogenation treatment is performed by thermal treatment.
In still another embodiment of the invention, the dehydrogenation treatment is performed by thermal treatment at 300.
degree.
C.
to 500.
degree.
C.
In yet another embodiment of the invention, the activation is performed by laser irradiation, and the dehydrogen treatment is also performed by laser irradiation.
In another embodiment of the invention, the laser irradiation for the dehydrogeation treatment is performed at a smaller energy density than laser irradiation for the activation.
According to another aspect of the invention, a method for producing a liquid crystal display apparatus includes the steps of fabricating the semiconductor device using the above-mentioned method for fabricating a semiconductor device.
Thus, the invention described herein makes possible the advantages of (1) providing a method for fabricating a semiconductor device having satisfactory junction characteristics by including a satisfactory impurity implanted portion, and (2) providing a method for producing a liquid crystal display apparatus having high display quality.
These and other advantages of the present invention will become apparent to those skilled in the art upon reading and understanding the following detailed description with reference to the accompanying figures.



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