Home | Links | Contact Us | More About Intellectual Property | Bookmark

Search patents:

Home

MEMS

Method-for-forming-Cu-In-Se-sub-2-films

High frequency analog transistors method of fabrication and circuit implementation

The present invention relates generally to the manufacture of integrated circuits and more ...

Semiconductor structure and method of manufacture

OF THE DRAWINGS FIGS. 1-20 are highly enlarged transparent oblique isometric views of a ...

Method of fabricating a complementary bipolar junction transistor

The present invention is therefore directed to a method of fabricating a complementary bipolar ...

Design and fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications

The present invention relates to a method of design and fabrication of a micro-electro-mechanical ...

Micro-electromechanical system device

OF THE DRAWINGS FIG. 3 illustrates an initial stage in the manufacture of a MEMS device 100. What ...

Optically controlled MEM switches

The present invention alleviates the above-noted problem of providing control lines for an array MEM...

Process for high yield fabrication of MEMS devices

The present invention provides a MEMS fabrication process that minimizes the thickness of the ...

Optical device, laser beam source, laser apparatus and method of producing optical device

The invention claimed is: 1. A method for producing an optical element, comprising: a step of ...

High aperture LCD with insulating color filters overlapping bus lines on active substrate

OF CERTAIN EMBODIMENTS OF THIS INVENTION Referring now more particularly to the accompanying ...

High aperture LCD with insulating color filters overlapping bus lines on active substrate

OF CERTAIN EMBODIMENTS OF THIS INVENTION Referring now more particularly to the accompanying ...

Method for forming Cu In Se.sub.2 films

Details

Inventors: Ermer, James H.; Love, Robert B.;
Assignee: Atlantic Richfield Company (Los Angeles, CA)
Primary Examiner: Niebling; John F.
Assistant Examiner: Leader; William T.
Attorney, Agent or Firm: Metrailer; Albert C.

A method for fabricating a copper indium diselenide semiconductor film comprising use of DC magnetron sputtering apparatus to sequentially deposit a first film of copper on a substrate and a second film of indium on the copper film. Thereafter the substrate with copper and indium films is heated in the presence of gas containing selenium at a temperature selected to cause interdiffusion of the elements and formation of a high quality copper indium diselenide film. In a preferred form, an insulating substrate is used and an electrical contact is first deposited thereon in the same DC magnetron sputtering apparatus prior to deposition of the copper and indium films.

DETAILED DESCRIPTION What is claimed is: 1.
A method for fabricating a copper indium diselenide semiconductor film comprising: in a single vacuum chamber sequentially depositing a film of copper on a substrate by DC magnetron sputtering from a first cathode and depositing indium on said film of copper by DC magnetron sputtering from a second cathode to form a composite film of copper and indium; and heating said composite film of copper and indium in the presence of a source of selenium at a temperature and for a time selected to cause interdiffusion of copper, indium and selenium to form a copper indium diselenide film.
2.
A method according to claim 1 wherein said copper and indium are deposited in said single vacuum chamber by continuously moving said substrate past said first and second cathodes.
3.
A method according to claim 1 wherein said substrate includes a metallic current collecting film and said film is deposited on said substrate before deposition of said film of copper by DC magnetron sputtering from a third cathode.
4.
A method according to claim 3 wherein said current collecting film, said film of copper and said indium are deposited sequentially in said single vacuum chamber by continuously moving said substrate past said third, first and second sputtering cathodes.
5.
A method according to claim 1 wherein said substrate includes a metallic current collecting film and said film is deposited on said substrate before deposition of said film of copper by: depositing a layer of chromium on said substrate by DC magnetron sputtering from a third cathode; and depositing a layer of molybdenum on said chromium layer by DC magnetron sputtering from a fourth cathode.
6.
A method according to claim 1 wherein said substrate is neither heated nor cooled during said depositing steps.
7.
A method according to claim 1 wherein; said film of copper is deposited to a thickness of from about 200 to about 2000 angstroms, and indium is deposited to a thickness of from about 400 to about 4000 angstroms, said thicknesses being selected to provide an atomic ratio of copper to indium of about one

Related patents

	Rapid process for producing a chalcopyrite semiconductor on a substrate This object is achieved, according to the invention, by a process for producing a chalcopyrite semiconductor of the type ABC.sub.2, where A is copper, B is indium or ...
	Method of manufacturing semiconductor devices In view of the aforementioned problems of the conventional techniques, a primary object of the present invention is to provide a method of manufacturing semiconductor ...
	Method of making compound semiconductor films and making related electronic devices In accordance with the invention, a method of forming a compound film includes the steps of preparing a source material, depositing the source material on a base to form ...
	Exposure method, exposure apparatus, and mask This invention was conceived in view of the problems in the prior art, and it is an object of the invention to provide an exposure method, an exposure apparatus, and a ...
	Thermal sprayed electrodes The above-discussed and other drawbacks and deficiencies of the prior art are overcome or alleviated by the method of the present invention, wherein thermal spray of ...
	Inorganic dopants, inks and related nanotechnology This invention includes several methods of making non-stoichiometric submicron and nanostructured materials and devices from both stoichiometric and non-stoichiometric ...
	Method of manufacturing semiconductor device OF THE INVENTION Embodiments of the present invention will be described hereinafter, by referring to the accompanying drawings. In each of the embodiments, a high ...
	MOS FET camera chip and methods of manufacture and operation thereof An object of this invention is to provide an integrated circuit which functions as an image detector which employs two transistors in a photosensor pixel array with ...
	MRAM device fabricated using chemical mechanical polishing The present invention provides a method of forming an MRAM cell which minimizes the occurrence of electrical shorts during fabrication. In an exemplary embodiment of the ...
	Rear entry photodiode with three contacts OF PREFERRED EMBODIMENT Referring initially to FIG. 1, one form of a semiconductor photodiode of the present invention is generally designated as 10. Photodiode 10 ...

0.004
Archive: All patents - Links Copyright (c)2006 Eipa-patents.org - All rights reserved